Simulation of HPIB propagation in biased charge collector

li hong-yu; he xiao-ping; sun jian-feng; yang hai-liang; qiu ai-ci

Volume 16 Issue 04

Apr. 2004

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li hong-yu, he xiao-ping, sun jian-feng, et al. Simulation of HPIB propagation in biased charge collector[J]. High Power Laser and Particle Beams, 2004, 16.

Citation:

li hong-yu, he xiao-ping, sun jian-feng, et al. Simulation of HPIB propagation in biased charge collector[J]. High Power Laser and Particle Beams, 2004, 16.

li hong-yu, he xiao-ping, sun jian-feng, et al. Simulation of HPIB propagation in biased charge collector[J]. High Power Laser and Particle Beams, 2004, 16.

Citation:

li hong-yu, he xiao-ping, sun jian-feng, et al. Simulation of HPIB propagation in biased charge collector[J]. High Power Laser and Particle Beams, 2004, 16.

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Simulation of HPIB propagation in biased charge collector

1.
Institute of Electrical Engineering,Xi'an Jiaotong University,Xi'an710049,China;
2.
Northwest Institute of Nuclear Technology,P.O.Box 69-10,Xi'an710024,China

Publish Date: 2004-04-15

Abstract

Abstract

A 2.5D PIC simulation using KARAT code for inner charge propagation within biased charge collector for measuring HPIB was presented. The simulation results indicated that the charges were neutralized but the current non-neutralized in the biased charge collector. The influence of ions collected vs biased voltage of the collector was also simulated. －800V biased voltage can meet the measurement of 500keV HPIB, and this is consistent with the experimental results．
- high power ion beams,
- biased charge collector,
- charge propagation