Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches

Yang Biao; Sun Xun; Li Yangfan; Sha Huiru; Jiao Jian; Li Deqiang; Zhang Lei; Luan Chongbiao; Xiao Longfei; Chen Xiufang; Xu Xiangang

doi:10.11884/HPLPB202436.240321

Volume 36 Issue 11

Nov. 2024

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Yang Biao, Sun Xun, Li Yangfan, et al. Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches[J]. High Power Laser and Particle Beams, 2024, 36: 115005. doi: 10.11884/HPLPB202436.240321

Citation:

Yang Biao, Sun Xun, Li Yangfan, et al. Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches[J]. High Power Laser and Particle Beams, 2024, 36: 115005. doi: 10.11884/HPLPB202436.240321

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Influence of laser spot energy distribution on the on-state performance of GaN-based photoconductive switches

doi: 10.11884/HPLPB202436.240321

Yang Biao^{1, 2
,},
Sun Xun^{1, 2},
Li Yangfan^{1, 2},
Sha Huiru^{1, 2},
Jiao Jian^{1, 2},
Li Deqiang^{1, 2},
Zhang Lei^{1, 2},
Luan Chongbiao³,
Xiao Longfei^{1, 2
,
,},
Chen Xiufang^{1, 2},
Xu Xiangang^{1, 2}

1.
Institute of Novel Semiconductors, Shandong University, Jinan 250100, China
2.
State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
3.
Institute of Fluid Physics, CAEP, Mianyang 621900, China

Received Date: 2024-09-12
Accepted Date: 2024-10-07
Rev Recd Date: 2024-10-07

Available Online: 2024-10-15

Publish Date: 2024-11-01

Abstract

Abstract

The beam spot is one of the important factors affecting the on-state performance of photoconductive switches. The on-state performance of the GaN photoconductive switch has been tested under the triggering of Gaussian beam and flat-top beam. As the energy uniformity of flat-top beam is better than that of Gaussian beam, the results show that the voltage conversion efficiency is increased by 6.8% under the same applied bias voltage (800 V), Triggered by flat-top beam at a laser energy of 500 μJ, GaN PCSS shows a maximum peak output voltage of 4550 V, at the same time the output power reaches 414 kW and the conduction is 13.7 Ω. The output waveform has a rise time of 420 ps and a fall time of 5 ns.
- photoconductive semiconductor switch,
- GaN,
- flat-top beam,
- Gaussian beam,
- on-state performance

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References(16)

References

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