Simulative calculation of the dose enhancement factor of W-SiO2 and Ta-SiO2 interface

The dose would be enhanced in low Z material when X-ray enters the interface which is constructed with different materials. The mechanic of dose enhancement is introduced in this article, and the Dose Enhancement Factors Of W-SiO2、Ta-SiO2 interface are calculated in the article. The calculated results demonstrate that there exits stronger dose-enhancement in the SiO2 side near the interface when the energy of X-ray is between 100keV and 150keV.