yang zhi-an, jin tao, yang zu-shen, et al. Radiation impairment effects on C-V curves and I-V curves of Si-SiO2 interface induced by intense pulse X-ray[J]. High Power Laser and Particle Beams, 2002, 14.
Citation:
yang zhi-an, jin tao, yang zu-shen, et al. Radiation impairment effects on C-V curves and I-V curves of Si-SiO2 interface induced by intense pulse X-ray[J]. High Power Laser and Particle Beams, 2002, 14.
yang zhi-an, jin tao, yang zu-shen, et al. Radiation impairment effects on C-V curves and I-V curves of Si-SiO2 interface induced by intense pulse X-ray[J]. High Power Laser and Particle Beams, 2002, 14.
Citation:
yang zhi-an, jin tao, yang zu-shen, et al. Radiation impairment effects on C-V curves and I-V curves of Si-SiO2 interface induced by intense pulse X-ray[J]. High Power Laser and Particle Beams, 2002, 14.
Intense pulse X-ray is used to irradiate Si-SiO2 interface. C-V curves and I-V curves are tested be fore and after X-ray irradiation. Experiment results show that C-V curves have the following changes under intense pulse X-ray irradiation: (1) Flatband Volt age of high frequency C-V has a little positive drift, sodoes the gate volt age in depletion region, which is different from a negative drift under low-power pulse X-ray irradiation; (2) Oxide capacitance of low and high frequency C-V lift after intense pulse X-ray irradiation; (3) Minimum capacitance of high frequency C-V lifts after intense pulse X-ray irradiation. Experiment results also show that slopes of I-V subthreshold curves have gradually aber rant under six times intense pulse X-ray irradiation. One reason is that intense pul
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