he xiaoping, wang haiyang, zhou jingzhi, et al. 12 kV high voltage reversely switched dynistor assemblyJ. High Power Laser and Partical Beams, 2010, 22(04).
Citation: he xiaoping, wang haiyang, zhou jingzhi, et al. 12 kV high voltage reversely switched dynistor assemblyJ. High Power Laser and Partical Beams, 2010, 22(04).

12 kV high voltage reversely switched dynistor assembly

  • The structure and working principle of reversely switched dynistor(RSD) semiconductor closing switch are introduced. Design techniques of the high voltage RSD assembly are analyzed. A 12 kV RSD assembly and its trigger system have been designed and constructed, which can operate at 10~12 kV. Test results show the stable and reliable operation of this assembly. Under 12 kV, the peak amplitude of current could reach 133 kA, with 24 C charge transferred and current rising rate of 4.12 kA/μs, and the peak power switched could reach 1.6 GW.
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