he xiaoping, wang haiyang, zhou jingzhi, et al. 12 kV high voltage reversely switched dynistor assembly[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
he xiaoping, wang haiyang, zhou jingzhi, et al. 12 kV high voltage reversely switched dynistor assembly[J]. High Power Laser and Particle Beams, 2010, 22.
he xiaoping, wang haiyang, zhou jingzhi, et al. 12 kV high voltage reversely switched dynistor assembly[J]. High Power Laser and Particle Beams, 2010, 22.
Citation:
he xiaoping, wang haiyang, zhou jingzhi, et al. 12 kV high voltage reversely switched dynistor assembly[J]. High Power Laser and Particle Beams, 2010, 22.
The structure and working principle of reversely switched dynistor(RSD) semiconductor closing switch are introduced. Design techniques of the high voltage RSD assembly are analyzed. A 12 kV RSD assembly and its trigger system have been designed and constructed, which can operate at 10~12 kV. Test results show the stable and reliable operation of this assembly. Under 12 kV, the peak amplitude of current could reach 133 kA, with 24 C charge transferred and current rising rate of 4.12 kA/μs, and the peak power switched could reach 1.6 GW．
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