Zhang Guifu, Zhou Jie, Liu Youjiang. A 2 G/s sampling rate, 20 GHz bandwidth master-slave track-and-hold amplifier in 0.13 μm SiGe BiCMOS technologyJ. High Power Laser and Partical Beams, 2020, 32(6): 063006. DOI: 10.11884/HPLPB202032.190421
Citation: Zhang Guifu, Zhou Jie, Liu Youjiang. A 2 G/s sampling rate, 20 GHz bandwidth master-slave track-and-hold amplifier in 0.13 μm SiGe BiCMOS technologyJ. High Power Laser and Partical Beams, 2020, 32(6): 063006. DOI: 10.11884/HPLPB202032.190421

A 2 G/s sampling rate, 20 GHz bandwidth master-slave track-and-hold amplifier in 0.13 μm SiGe BiCMOS technology

  • A fully-differential master-slave track-and-hold amplifier (MS-THA), with 20 GHz bandwidth is designed and fabricated using 0.13 μm SiGe BiCMOS technology. The MS-THA employs conventional switched-emitter-follower (SEF) as track-and-hold core circuit, Cherryhooper circuits as band-boosting of input buffer and output buffer. To verify the validity of the above circuits, a single-stage THA is designed together with the MS-THA. Operating with a single +3.3 V supply, 0 V input direct-voltage, 2 G/s sampling and −3 dBm input power, the MS-THA achieves a single-ended spurious free dynamic range (SFDR) of less than −23.5 dB at frequency of up to 20 GHz, and total power consumption of about 300 mW.
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