Abstract: Based on the performance characteristics of Insulated Gate Bipolar Translator(IGBT), a new type of switch driving circuit for pulsed power system has been designed. The switch turns on quickly with this driving circuit. The principle of this driving circuit is elaborated, and the circuit based on transformer is designed to offer gate pulses voltage as high as 60 V, so that switching speed can be improved. The driving circuit and pulse forming network are simulated by software. Meanwhile, experiment confirms this strategy using pulse forming network in Blumlein construction. By this strategy of driving, both pulse current through IGBT and the current slope are improved. Extended results of the performance of driving circuit are presented, which show that, the peak current is 470.53 A and the current slope is 9.41 A/ns at the voltage of 1 kV. The target of high-speed gate driving is achieved, and the current slope is 7.53 times the data given by the datasheet.