Abstract: As a key representative material for the third-generation wide bandgap semiconductors, silicon carbide (SiC) is a promising wide band gap semiconductor material and can be used for the fabrication of high-power and high-frequency electronics, due to its superior physical properties, such as high thermal conductivity, wide band gap and high critical breakdown field. In recent years, bulk growth of SiC single crystals and the fabrication of devices have made significant progress. The paper introduces the growth techniques for SiC bulk and presents the relationship between the on-state resistance and voltage or laser energy. It also analyses the failure of devices.