强流二极管阳极靶温度和热形变模拟

Simulation of the temperature and thermal deformation of anode targets in high-current diodes

  • 摘要: 以电子束在靶中的能量沉积剖面为桥梁,建立了二极管阳极靶温度和热形变模拟方法。该方法可获知二极管不同工作状态下靶的温度分布和热形变情况,为靶热-力学损伤研究提供基础数据,为二极管构型设计和寿命提升提供技术支撑。将该方法应用于“强光一号”短γ二极管,计算结果显示:当阳极离子密度大于1014 cm−3时(强箍缩),靶表面温度最高可达5500~6000 ℃,热形变量达约4.5 mm;无离子流时(弱箍缩),温度处在4500 ℃左右,形变为2.8~3.5 mm。

     

    Abstract: The thermal-mechanical damage induced by high current pulsed electron beam striking on anode targets is a key factor affecting the stability and lifetime of high current diodes. This problem is mostly addressed by replacing the anode target and cleaning the cavity and cathode to ensure the normal operation of the diode. In this paper, a diode anode target temperature and thermal deformation simulation method is established using the energy deposition profile of the electron beam in the target as a bridge. The method can be used to determine the temperature distribution and thermal deformation of the target under various diode operating conditions, provide basic data for the investigation of thermal-mechanical damage to the target, and provide technical support for diode configuration design and life enhancement. With application of this method to the “Qiangguang-I” accelerator, the simulation results show that the surface temperature of the target can reach 5500−6000 ℃ and the thermal deformation can reach about 4.5 mm when the ion density is more than 1014 cm−3 (tight-pinched). The temperature is about 4500 ℃ and the thermal deformation is 2.8−3.2 mm when there is no ion flow (weak-pinched).

     

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