基于小角度V形腔光谱合束的半导体激光器和频

Sum frequency generation of semiconductor laser based on V-shaped spectral beam combining

摘要: 通过小角度V形腔外腔光谱合束将两个808 nm半导体激光器合束，提高半导体激光器的输出功率及光束质量。两个合束单元分别工作在795.8 nm和800.5 nm，将所获光束通过非线性光学方法进行频率转换。外腔光谱合束实现输出功率为6.5 W快慢轴光束质量M²=2.2×18.5的光束输出，所获光束慢轴M²因子相较于自由运转单管激光器提高了30%，外腔光谱合束效率为83%。基于所获光源，实现了半导体激光器小角度V形腔外腔光谱合束和频，获得输出功率为18.3 mW波长为401.0 nm的蓝光输出，和频效率为0.28%。

Abstract: Two 808 nm semiconductor lasers were combined by V-shaped spectral beam combining and locked at 795.8 nm and 800.5 nm respectively. The output power and beam quality in the slow axis were improved significantly. The sum frequency of semiconductor lasers was realized based on the laser source. A laser with an output power of 6.5 W and beam quality of M²=2.2×18.5 was obtained by the spectral beam combining. The M² in slow axis was improved by 30% and the combining efficiency was 83%. The sum frequency laser with 401.0 nm at a power of 18.3 mW was obtained and the efficiency of sum frequency generation was 0.28%.