基于半桥结构的双极性脉冲电源的研究

潘英进; 熊奕鸣; 李孜; 姜松; 饶俊峰

doi:10.11884/HPLPB202436.230329

基于半桥结构的双极性脉冲电源的研究

doi: 10.11884/HPLPB202436.230329

潘英进^1,,
熊奕鸣³,
李孜¹,
姜松¹,
饶俊峰^2, ,

1.
上海理工大学机械工程学院，上海 200093
2.
中国科学院苏州生物医学工程技术研究所，江苏苏州 215163
3.
国网物资有限公司，北京 100120

基金项目: 国家自然科学基金项目(12205192)

详细信息

作者简介:
潘英进，panyingjin07@163.com

通讯作者:
饶俊峰，raojunfeng1985@163.com。

中图分类号: TM832
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- 文章访问数: 568
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- 被引次数: 0
出版历程
- 收稿日期: 2023-09-22
- 修回日期: 2023-11-29
- 录用日期: 2023-11-29
- 网络出版日期: 2023-12-02
- 刊出日期: 2024-01-12

Investigation of bipolar pulse source based on half-bridge structure

1.
School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
2.
Suzhou Institute of Biomedical Engineering and Technology, Chinese Academy of Sciences, Suzhou 215163, China
3.
State Grid Materials Co. Ltd, Beijing 100120, China

摘要

摘要: 为了满足脉冲电场消融的应用需求，解决单极性脉冲电场分布不均匀的问题，研制了一台基于半桥结构的主电路、具有纳秒级前沿的高重复频率双极性亚微秒高压脉冲电源。该脉冲电源由FPGA提供控制信号，经过驱动芯片放大控制信号后，利用光耦隔离驱动多个SiC MOSFET。驱动电路所需元器件较少，信号控制时序简单，可提供负压偏置，使开关管可靠关断，提高了电路的抗电磁干扰能力，使电源能稳定运行。通过电阻负载实验，对比分析了不同栅极电阻对驱动电压的影响，驱动电压上升沿时间越短对应的双极性高压脉冲前沿越快。实验结果表明：所设计的高频双极性脉冲电源在100 Ω纯阻性负载上能够稳定产生重复频率双极性纳秒脉冲，输出电压0～±4 kV可调，脉宽0.2～1.0 μs可调，正负脉冲相间延时0～1 ms可调，上升沿和下降沿60～150 ns之间。该双极性脉冲电源电路设计结构紧凑，能满足应用的参数需求。
- 双极性脉冲 /
- 脉冲电源 /
- 高重复频率 /
- 功率MOSFET /
- 光耦隔离
Abstract: To meet the application requirements of pulsed electric field ablation and solve the problem of uneven distribution of unipolar pulse electric field, a bipolar submicrosecond high voltage pulse power supply with high repetition rate and nanosecond front based on the main circuit of half-bridge structure was developed. The pulse power supply is provided by the FPGA control signal, after amplifying the control signal by the driver chip, the photocoupler is used to drive multiple SiC MOSFETs. The drive circuit requires less components, its signal control timing is simple, and it can provide negative voltage bias, so that the switch tube is reliably turned off, which improves the anti-electromagnetic interference ability of the circuit, guranteeing stable operation of the power supply. Through resistance load experiment, the influence of different gate resistors on the driving voltage is compared and analyzed. The shorter the driving voltage rise time, the faster the bipolar high voltage pulse front is. The experimental results show that the designed high-frequency bipolar pulse power supply can stably generate repetitive bipolar nanosecond pulses on 100 Ω pure resistive load. The output voltage is adjustable from 0 to ±4 kV, the pulse width is adjustable from 0.2 μs to 1.0 μs, the phase delay between positive and negative pulses is adjustable from 0 to 1 ms, and the rising edge and falling edge are between 60 ns and 150 ns. The design structure of the bipolar pulse source circuit is compact, which can meet the application parameter requirements.
- bipolar pulse /
- pulse power /
- high repetition rate /
- power MOSFET /
- photocoupler isolation

HTML全文

图 1 基于半桥结构的全固态双极性脉冲电源电路原理图

Figure 1. Schematic of all-solid-state bipolar pulse generator based on half-bridge structure

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图 2 驱动控制系统

Figure 2. Drive control system

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图 3 基本控制时序图

Figure 3. Basic time sequence of control signals

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图 4 均压电路原理图

Figure 4. Schematic of the voltage balancing circuit

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图 5 不同 R_g值时的驱动电压波形和负载输出电压波形

Figure 5. Driving voltage waveforms and load voltage waveforms with different gate resistors

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图 6 不同电压幅值的输出波形

Figure 6. Output waveforms with variable voltage

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图 7 不同脉宽的输出波形

Figure 7. Output waveforms with variable pulse width

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图 8 不同负载下的输出电压波形对比

Figure 8. Comparison of output voltage waveforms under different loads

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图 9 高频脉冲串输出

Figure 9. High frequency pulse string

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图 10 50 Ω 负载输出电压及电流波形

Figure 10. Voltage and current waveforms over 50 Ω load

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