用于211At生产的高功率金属Bi靶热效应模拟

Simulation of the thermal effect on high power Bi target for the large-scale 211At production

  • 摘要: 为提高用于医用同位素211At生产的金属Bi靶在高束流功率作用下的可靠性与使役寿命,对多种束流均匀化方法进行了模拟与对比,利用计算流体力学(CFD)方法模拟分析了在wobbler磁铁作用下强度为500 eμA的α束流轰击Bi靶产生的热效应,为靶系统的设计和寿命的延长提供了关键技术支撑。结果表明,通过扫描实现束流均匀化可大幅降低靶上的最大热功率密度;在靶前采用wobbler磁铁对束流进行周期性圆扫描可有效降低Bi靶的表面温度。当扫描频率为50 Hz时,Bi靶最高温度为189.8 ℃,低于其熔点(271.3 ℃),能够满足Bi靶在此高功率束流照射下安全运行的温度要求。

     

    Abstract: To improve the reliability and operation life of metallic Bi targets for the production of medical isotope 211At using high current α beam, several beam uniformization methods were simulated and compared. The thermal effect of 500 eμA α beam bombarding a Bi target with wobbler magnet was modeled and analyzed by computational fluid dynamics (CFD) method, which provided key technical support for the design of target system and the improvement of target life time. The results showed that the peak beam thermal effect on the target was obviously reduced by applying beam scanning. In front of the target, a wobbler magnet was used to periodically scan the beam, which could effectively reduce the temperature on Bi target surface. With a scanning frequency of 50 Hz, the highest temperature on Bi target was 189.8 ℃, lower than the melting point of Bi metal (271.3 ℃), which could meet the temperature requirement of Bi target under such a high beam power condition.

     

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