电子FLASH-RT剂量学模拟计算与实验研究

Electron FLASH-RT dosimetry simulation and experimental research

  • 摘要: 通过实验测量与数值模拟相结合的方法评估电子FLASH-RT的剂量学特性。实验中,使用EBT3胶片在固体水模中测量剂量,同时采用MCNP5程序模拟验证束流特征参数。实验平台基于9 MeV电子直线加速器构建,通过调整加速器参数,在源皮距1 m处实现了250 Gy/s的超高剂量率。实验与模拟结果在剂量分布上的最大偏差不超过5%,束流平坦度控制在3%以内。关键剂量率评估显示,加速器在最大工况下工作,可获得满足FLASH效应所需的超高剂量率。离轴剂量变化研究表明,引出窗中水层的存在改善了束流的均匀性。中心轴深度剂量分布分析表明,模拟与实验结果在水层厚度10 mm时吻合较好。二维剂量分布显示,模拟结果与EBT3胶片测量趋势一致。研究结果表明,电子FLASH-RT实验平台能够提供所需的超高剂量率,且实验与模拟结果具有较高的一致性,为FLASH-RT的进一步研究和应用提供了重要的剂量学参数和束流特征参考。

     

    Abstract: This study aims to evaluate the dosimetric characteristics of electron FLASH-RT by combining experimental measurements with numerical simulations. In the experiment, EBT3 films were used to measure doses in solid water phantoms, while the MCNP5 program was employed to simulate and verify beam characteristics. The experimental platform was constructed based on a 9 MeV electron linear accelerator, and by adjusting the accelerator parameters, an ultra-high dose rate of 250 Gy/s was achieved at a source-to-surface distance of 1 m. The maximum deviation between experimental and simulated results in dose distribution did not exceed 5%, and the beam flatness was controlled within 3%. Key dose rate assessments show that the accelerator can work at maximum conditions to achieve the ultra-high dose rate required for the FLASH effect. Off-axis dose variation studies indicate that the presence of a water layer in the extraction window improved the uniformity of the beam. Central axis depth dose distribution analysis showes that the simulation and experimental results matched well at a water layer thickness of 10 mm. The two-dimensional dose distribution showes that the simulation results are consistent with the EBT3 film measurements. The study results demonstrate that the electron FLASH-RT experimental platform can provide the required ultra-high dose rate, and there is a high degree of consistency between experimental and simulation results, providing important dosimetric parameters and beam characteristic references for further research and application of FLASH-RT.

     

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