In space environments, electronic systems are vulnerable to various adverse effects, including electromagnetic pulses (EMP) and particle radiation, which can significantly degrade device performance and reliability. Silicon-on-insulator (SOI) MOSFETs are widely used in aerospace applications due to their excellent electrical characteristics, but their response to the combined radiation effects needs further investigation.

This study aims to analyze the effects of electromagnetic pulses and heavy-ion induced single-particle events on the electrical characteristics of short-channel SOI MOSFETs. It also explores the synergistic impact of when both effects occur simultaneously, providing insights for improving the device robustness in harsh space conditions.

A two-dimensional TCAD-based numerical model of short-channel SOI MOSFETs was developed, incorporating impact ionization, carrier generation and recombination, heat transfer, and thermodynamic effects. Electromagnetic pulses were modeled as transient voltage pulses with varying amplitudes, while heavy-ion effects were simulated through charge deposition profiles characterized by linear energy transfer (LET) parameters. The influence of gate voltage, channel length, and LET on device behavior was systematically studied.

Simulation results indicate that EMP-induced voltage transients can cause avalanche breakdown in the drain PN junction, with the breakdown voltage decreasing as gate bias increases or channel length shortens. The internal electric field, current density, and device temperature intensify during breakdown. Heavy-ion irradiation generates electron-hole pairs, causing transient increases in drain current, which lowers the avalanche breakdown threshold when combined with EMP. Higher LET values further exacerbate device degradation by increasing ionization effects and reducing breakdown voltages. The combined effects produce more severe electrical deterioration compared to single effects.

The research demonstrates that both EMP and heavy-ion irradiation can markedly weaken the electrical stability of short-channel SOI MOSFETs. These findings underscore the importance of designing radiation-hardened devices for space applications. The study provides a theoretical basis for future investigations into the synergistic effects of radiation phenomena on power semiconductor devices.