Radio frequency (RF) front-end components are among the most vulnerable elements in integrated circuit systems when exposed to intense electromagnetic environments. Investigating their degradation mechanisms and failure thresholds is therefore critical for identifying system weak points and devising effective protection and reinforcement strategies. However, existing high power microwave (HPM) injection tests rely on manual operation, lack standardized procedures and deliver limited repeatability.

In order to achieve precise and efficient evaluation of device degradation and failure thresholds and to establish standardized test methods and assessment procedures.

This work developed a high power microwave (HPM) automatic measurement platform grounded in the interaction mechanism between HPM and devices, and designed two testing protocols—single pulse excitation for electrical stress characterization and continuous pulse excitation for thermal failure evaluation.

A commercial low noise amplifier (LNA) served as the test device; synchronous measurements of time domain response, frequency domain characteristics and operating current, combined with pre/post test parameter comparison, pinpointed damage thresholds. Furthermore, we conducted a comprehensive evaluation of first, second, and third damage events, correlating cumulative damage effects with key device parameters through microphysical analysis to elucidate the dominant failure mechanisms.

The proposed measurement system and evaluation methodology offer a robust framework for reliability assessment of semiconductor devices in high power electromagnetic environments and provide essential experimental support for damage resilience analysis and optimized device design.