基于PIN二极管的兆瓦级快速倒相开关设计

Design of a megawatt-level fast bi-phase modulator based on PIN diodes

  • 摘要: 为研究基于磁控管等电真空振荡器的低成本、小型化、稳定且可阵列化应用的SLAC能量倍增器(SLED),设计了一种功率容量兆瓦级、响应时间纳秒级的高功率快速倒相开关。在波导结构中插入传统PIN二极管加载线型移相电路单元,通过波导外置偏置电路控制PIN二极管的“开”/“关”状态,改变移相电路的等效阻抗以控制波导传输微波相位。已通过高功率实验验证了此类二极管波导移相器的高功率特性。通过级联8个移相电路单元实现180°相移。对所设计的倒相开关进行了频域与时域参数测试:频域测试结果表明,该倒相开关在工作频率下的插损小于0.7 dB,在中心频率2.458 GHz处相移172°,相移量与仿真设计值相比误差在±4°以内;时域测试结果表明,该倒相开关的倒相时间约为5 ns。

     

    Abstract:
    Background
    High power microwave (HPM) pulse technology has developed rapidly due to its applications in particle accelerators, radar, communications, directed energy, plasma physics, and other fields. Pulse compression technology provides an effective method for enhancing the peak power of microwave pulses.
    Purpose
    In order to study a low-cost, miniaturized, stable, and arrayable SLAC Energy Doubler (SLED) based on vacuum electronic oscillators such as magnetrons, a high power fast bi-phase modulator with megawatt-level capacity and nanosecond response time has been designed.
    Methods
    Insert a conventional PIN diode loaded-line type phase-shifting circuit into the waveguide structure, and the equivalent impedance of the phase-shifting circuit changes by switching the “on” and “off” states of the PIN diodes through the waveguide external bias circuit, then the waveguide transmission microwave phase changes. The high-power characteristics of such PIN diode waveguide phase shifters have been verified by high-power experiments.
    Results
    In this paper, a 180° phase shift is realized by cascading 8 phase-shifting circuit cells. The frequency-domain and time-domain parameters of the designed bi-phase modulator are tested. The frequency-domain test results show that the insertion loss of the bi-phase modulator is less than 0.7 dB, and the phase shift is 172° at the center frequency of 2.458 GHz. The error of the phase shift is within ±4° compared with that of the design value in simulation. The time-domain test results show that the inversion time of the bi-phase modulator is about 5 ns.
    Conclusions
    Compared with traditional semiconductor phase shifters, this bi-phase modulator can achieve the same phase-reversal speed while withstanding high power capacities, making it extremely valuable in the HPM field.

     

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