Semiconductor laser devices (LDs) are a kind of laser with semiconductor material as its working material. LDs are the general name of optical oscillator and optical amplifier produced by photon excited emission caused by electron-optical transition in semiconductor material. LDs have the advantages of small volume, light weight, low power consumption, long life, simple structure, direct modulation and fast response. Thus, LDs are widely used as light source devices in the fields of optics communication, measurement, imaging, display, illumination, industrial processing, medical diagnosis, and so on.

With the application of LD in space optics communication, large hadron collider, nuclear industry, and other radiation environments, LDs operated in space radiation or nuclear radiation environment will suffer radiation damage. The reliability of LD-based optics communication system in radiation environment has attracted much attention. In view of the few reports on LD irradiation damage test methods at home and abroad, this paper mainly focuses on the radiation damage effects on the LDs used in radiation environment.

Referring to domestic and foreign standards, specifications and guidelines related to the radiation effects on the electronic components, combining LD irradiation damage test, radiation particle transport simulation and radiation effect simulation, and radiation damage mechanism analysis, the test methods of LD irradiation damage effect are studied from the aspects of irradiation source selection, test flow, irradiation bias conditions, etc.

The radiation test procedures for the LD displacement effect, ionization total dose effect, and transient dose rate effect are established respectively to form the test method of radiation damage effects on LDs.

The research provides the experimental technical supports for the evaluation of LD radiation damage and the test of LD radiation hardening.