片上固态高功率微波实现辐射因子20 kV输出

Demonstration of on-wafer solid-state high-power microwave with field-range product of 20 kV

  • 摘要: 随着低空经济产业加速发展,低空安防日益引起广泛关注。我们提出了一种片上固态高功率微波新思路,并在单个厚度0.5 mm、直径0.15 m的半导体晶圆上集成了储能电容、高功率光控半导体开关及天线,实现了辐射因子20 kV的超宽谱高功率微波输出。实验表明,基于集成化片上高功率微波系统,对10 m处的消费级无人机造成了通信链路切断及飞行失控的效果。

     

    Abstract:
    Background
    As the low-altitude economy industry accelerates, low-altitude security has attracted increasing attention. High-power microwave (HPM) is one of the important means to address the security threats posed by non-cooperative unmanned aerial vehicles (UAVs).
    Purpose
    As a type of high-power electromagnetic pulse, ultra-wideband high-power microwave (UWB-HPM) can attack the electronic information systems of non-cooperative UAVs through “front-door” or “back-door” coupling, resulting in effects such as interference, disruption, damage, and burnout.
    Methods
    We propose a new concept of on-wafer high-power microwave on wafer (HPM on-wafer), which integrates energy storage capacitors, high-power optically controlled semiconductor switches, and antennas on a single semiconductor wafer with a thickness of 0.5 mm and a diameter of 0.15 m.
    Results
    The unit of HPM on-wafer achieves an ultra-wideband high-power microwave output with a radiation factor of 20 kV.
    Conclusions
    Experiments show that based on this integrated HPM on-wafer unit, the communication link of a consumer-grade UAV at a distance of 10 m is cut off and the UAV loses flight control. By arranging and combining the basic units of HPM on wafer, modular expansion can be realized to form ultra-wideband high-power microwave systems of different scales, which can meet the requirement of achieving the intended strike effect on different platforms.

     

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