低阻抗嵌套型双环电子束二极管的粒子模拟研究

Particle simulation studies of low impedance nested double-ring electron beam diodes

  • 摘要: 低阻抗嵌套型双环电子束二极管是一种自磁绝缘二极管。本文采用全电磁粒子模拟程序对低阻抗嵌套型双环二极管中电子束的产生和传输特性进行了较为细致的数值模拟,重点考查了电压脉冲上升过程中电子束传输特性的演化情况,并对二极管的物理特性和运行规律进行了物理分析和总结。通过数值模拟,给出了二极管中电场和角向自磁场空间分布、电子在实空间和相空间的分布、阳极靶面电子数能谱、电子落点和入射角分布等典型物理图像;给出了结构参数固定的情况下二极管电压波形和纵向间距的变化对二极管阻抗、电流以及电子束运行轨迹等的影响规律,加深了对二极管工作过程和物理特性的理解,同时可为后续利用蒙特卡罗(MC)程序计算电子轫致辐射产生的X射线剂量和辐射场的空间分布等提供电子源输入参数。当二极管电压峰值为1.5 MV时,模拟得到了到靶电流强度约为2.47 MA,阻抗约为0.6 Ω的电子束,二极管中自磁场的最大强度达到了1.7 T。

     

    Abstract:
    Background As a high-energy radiation source, X-ray sources have been widely used in many research areas, such as radiation detection, radiation effects and surface thermodynamic effects. Bremsstrahlung diodes can produce X-ray sources with adjustable energy spectrum and pulse width.
    Purpose In order to improve the quality of X-ray source, the physical process of electron beam generation and transmission to target in Bremsstrahlung diode needs to be studied deeply.
    Methods In this paper, the generation and transmission characteristics of the electron beam in a bremsstrahlung diode which is called the low impedance nested double-ring diode are numerically simulated using the all electromagnetic PIC(Particle-in-Cell) code. Evolution of the electron beam propagation characteristics during the voltage pulse rise process is investigated emphatically, and the physical characteristics and operation principles of the diode are analyzed and summarized.
    Results When the peak diode voltage is 1.5 MV, simulation results showed that the total beam current obtained on the target is about 2.47 MA, the impedance is 0.6 Ω and the maximum intensity of the self-magnetic field in the diode reaches 1.7 T. The typical physical images such as the spatial distribution of electric field and angular self-magnetic field in the diode, the distribution of electrons in real space and phase space, the distribution of electron numbers versus the electron energy, the radial position, and impact angles on the anode target surface are given by simulations. The influence of diode voltage waveform and end axial gap length on diode impedance, current and electron beam trajectory are also obtained by simulations when the other structural parameters are fixed.
    Conclusions The simulation results will be used as the input parameters for subsequent calculation of X-ray dose and spatial distribution generated by electron bremsstrahlung using the Monte Carlo (MC) code.

     

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