Abstract:
Background Diamond is considered a promising candidate for photoconductive semiconductor switches (PCSSs) due to its exceptional material properties.
Purpose However, the development of high-performance diamond PCSSs is primarily impeded by their high on-state resistance and relatively low breakdown voltage. This study aims to improve the performance of the diamond PCSSs.
Methods Passivated with Si3N4, vertical PCSSs were fabricated using nitrogen-doped single-crystal diamonds with different doping concentrations and thicknesses. The doping concentrations of diamond samples were analyzed. The photoresponse of the PCSSs was characterized under 532 nm laser excitation over a range of DC bias voltages.
Results The experimental results showed that the nitrogen-doped diamond PCSSs presented a large on/off ratio (about 1011) along with sub-nanosecond rise and fall times. Among them, the diamond PCSS device with the highest nitrogen doping concentration exhibited the minimum on-state resistance. By reducing the material thickness, a peak output power of 128 kW was achieved at a bias voltage of 4 kV (corresponding to the electric field strength of 110 kV/cm), with the PCSS exhibiting an on-state resistance of 28.9 Ω, further improving the device performance.
Conclusions Through the design of nitrogen doping concentration, reduction of substrate thickness, and application of Si3N4 passivation, this work successfully developed diamond PCSSs with good performance, paving the way for the development of high-performance diamond PCSSs.
下载: