Abstract: As the core components of systems such as directed energy and advanced radar, the performance of high-power pulse sources largely depends on the characteristics of pulsed power switches. Although traditional gas switches and vacuum tube switches offer high power capacity, due to their inherent drawbacks including electrode erosion, large timing jitter, short service life, and low repetition rate, they are replaced gradually by solid-state semiconductor switches, which offer advantages such as long lifetime, high stability, and high repetition frequency. This paper systematically elaborates on the structural characteristics, working mechanisms and technology evolution trends of three typical types of pulse power semiconductor devices, and then focuses on the technical route of MOS-gated thyristors. Compared with power electronic devices such as metal-oxide-semiconductor field-effect transistors and insulated-gate bipolar transistors, MOS-gated thyristors offer comprehensive advantages in high-power solid-state pulse source applications, delivering higher power capability while maintaining fast rise-time performance. Furthermore, it introduces the challenges and research progress of MCT device technology in HPM application scenarios. The feasibility of this technical route for high power 100-ns solid-state pulse sources is verified through the development and practical implementation of 20 MW, 30 MW, and 50 MW solid-state pulse power modules. The high consistency and large capacity characteristics of these modules provide new solutions for the miniaturization and reliability of such devices.