矩底拱面状微透镜阵列的氩离子束刻蚀 

  • 摘要: 在ZrO2、InP、Si及SiO2即融凝石英衬底上用氩离子束刻蚀制作面阵矩底拱面状微透镜阵列,给出了氩离子束在不同的入射角度下刻蚀器件的速率与离子束能量之间的关系。实验表明,用国产BP212 紫外正型光刻胶制作的光致抗蚀剂掩膜图形在经过优化的工艺条件下可以通过氩离子束刻蚀将预定图形转移到衬底材料中。

     

    Abstract: The fabricating technology of Ar ion beam etching for largearea microlens array of 128×128 in ZrO2, InP, Si, and SiO2 substrates, was discussed in this paper. The experimental results showed that the experimental conditions of fabricating microlens array with the pdeterminating parameters in the different substrates were different. The experimental relations between the ionbeametching rate and ionbeam energy, and the SEM photograph of Si microlens array, were given.

     

/

返回文章
返回