电子碰撞激发机制中自电离与双电子俘获

AUTOIONIZATION AND DIELECTRONIC CAPTURE IN Ne LIKE Ge COLLISIONAL X RAY LASER

  • 摘要: 以Ge为例,研究了双电子复合代替自电离与双电子俘获对离子布居的影响;通过解包括双激发态和自电离与双电子俘获过程的速率方程组,研究了类F离子与类Ne离子基态对19.6nm与23.6nm激光线上、下能级的布居贡献因子及类Na离子与类Ne离子的电离速率,并讨论了这两条激光线的反转与增益。

     

    Abstract: Comparison of autoionization and dielectronic capture with dielectronic recombination in ion population in Ge plasma was given. Solving the coupled rate equations, the contribution factors from Flike and Nelike ions on the lower and the upper laser level of 19.6 and 23.6 nm lines, and the ionization rates of Nalike and Nelike ions were studied. Further more, inversion factor and gain at 19.6 and 23.6nm lines were discussed .

     

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