1.053μm激光产生逃逸电子的实验观测

THE EXPERIMENTAL OBSERVATION OF ESCAPING ELECTRONS PRODUCED BY 1.053μm LASER-IRRADIATED PLANAR TARGETS

  • 摘要: 利用1.053μm钕玻璃激光辐照Au、Ti、Ag及C8H8等材料平面靶,在不同功率密度IL下测量了等离子体中由于反常吸收而产生的逃逸高能电子能谱。测量是由一台可变磁场90°焦β谱仪完成的。测量结果表明:在谱仪测量的能量范围内,热电子分布中的高能尾部在高能电子能谱中所占的比重是完全可以忽略的。我们所测的电子能谱大多数可以用麦克斯韦分布来描述,高能电子温度Th一般为30~70keV。实验得到Au、Ti、C8H8平面靶ThIL之间的关系式。

     

    Abstract: This paper describes the experiments that 1.053 μm Nd:glass laser irradiates planar targets Au,Ag, Ti and C8H8. At different laser intensity we have meas-ured escaping high-energy electron spoctra that generated by abnormal abeorption in plasma. The results show that high-energy tail of hot electron distribution is negligible. The electron energy spoctra can be described by Maxwell distribution. High-energy elec-tron temperature Th is approximately 30~70keV. The scale between the temperature Th for planar targets Au,Ti and C8H8 and the irradiation intensity IL is given.

     

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