高性能X光二极管的研制

Development of X-ray diode with high performance

摘要: 作为X光测量的重要器件，X光二极管的研究和改进工作一直颇受重视。通过对储能系统和输出系统的重点研究与优化设计，研制出了新型超快响应X光二极管（XRD-Ⅱ），并在8 ps短脉冲激光装置上对探测器的性能进行了研究。实验结果表明:XRD-Ⅱ的阻抗匹配特性得到提高，耐压能力达6 kV，上升时间达40 ps，半高全宽达80 ps。标定实验给出的灵敏度结果也说明其灵敏度得到了保证。超快响应X光二极管的成功研制可大大提高X光诊断的时间分辨力，为实现精密定量诊断提供有利条件。

Abstract: A new type of X-ray diode (XRD-Ⅱ) with ultrafast response time was developed. XRD-Ⅱ detector was improved on the basis of old XRD (XRD-Ⅰ), and its performances were studied on the 8ps laser facility. The results show that XRD-Ⅱ has excellent high-voltage tolerance (to 6 kV) and super-fast response time ( rise time is about 40 ps, and full width at half maximum (FWHM) is about 80 ps when bias voltage is 5 kV). The detector calibration was carried out on Beijing synchrotron radiation facility, which shows that the detector’s sensitivity has not deteriorated.