Abstract: In this work, TiNi shape memory alloy films on oxidized single crystal Si substrate were successfully prepared by cosputtering of TiNi target with a separated Ti target. The transformation behavior was investigated by differential scanning calorimeter (DSC) and in-situ XRD. 60 keV H+ ions implantation shifted martensite transformation start/finish temperature Ms/Mf and austenite transformation start/finish temperature As/Af to lower temperature, whereas H+ implantation had little effect on the Rphase transformation temperatures Rs and Rf. glance incidence XRD results showed that titanium hydride formed after H+ implantation .The change of transformation temperatures can be attributed to the formation of hydride．