Abstract: In the last few years, the study of nitrogen incorporation into diamondlike carbon (DLC)films has received special attention. The DLC films have been deposited on glass substrates using RF plasma deposition method. N ions were introduced by ion implantation, and DLC(N) films were irradiated by ultraviolet light. Using Raman and infrared transimissing spectroscopy, the authors investigated the UV ray irradiation and N ions implantation effect on the structure and properties of DLC(N) films. The study showes that, UV ray and N ions irradiation does intensive damage on SP3C-H bonds, then leads to the increase of SP2C-H bonds and the decrease of resistivity obviously. It is clear that UV ray causes the increase of Si-O-Si and Si-C bonds also, i.e. the structure and properties of DLC films ha