REB二极管的电场计算和实验研究
NUMERICAL CALCULATION OF REB DIODE AND EXPERIMENTAL RESEARCH
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摘要: 在百焦耳准分子激光实验中,采用了径向绝缘的大面积强流相对论电子束二极管(简称REB二极管)。对"天光一号"的PFL线、有机玻璃隔板以及二极管腔内区域进行了二维轴对称电场计算,得到了直观的等位线图和电场分布图。结合二极管实验对计算结果进行了分析,用耐压因子概念解释沿面滑闪问题。另外,对一台焦耳级准分子激光加速器的二极管进行了优化电场设计。进行了有关改善三结合处电场分布的实验研究,给出三结合处电场强度在小于3kV/cm时,不会发生真空沿面击穿的结论。Abstract: A large area diode(12cm × 75cm) using a single insulating structure withoutgrading has been used in the research work of hundred-joule KrF laser.The distribution of elec-tric field lines and equipotential lines in REB(relativistic electron beam) diode has been calcu-lated and compared with the experimental results.There is no flashover occurred when the elec,tric field is less than 3kV/cm at the triple point(junction of a lucite wall with metallic wall anda vacuum).
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