过电离等离子体复合升温和绝热膨胀

ADIABATIC COOLING AND RECOMBINATION HEATING IN EXPANDING RECOMBINATION PLASMA

摘要: 给出了类H-C离3d_5/2-2p_3/2跃迁复合机制产生X光激光的电子密度、电子温度增益目标区域,研究了电离转复合处等离子体特征、复合阶段电子密度变化规律及影响电子温度的两个主要因素:作功冷却与复合升温,并给出了这两个因素的近似表达式。

Abstract: Objective region of gain in N_e/T_e plane for 3d_5/2-2p_3/2 transitions in H-like ion in recombination C plasma is given. The characteristics of plasma at the juncture of ionization and recombination are obtaine.Adiabatic cooling W_p and recombination heating W_s are studied and their approximate expressions are given.