多级XRAM型脉冲功率电源开关器件简化研究

张玉宸; 戴玲; 樊晟廷; 冯永杰; 林福昌

doi:10.11884/HPLPB202436.230211

多级XRAM型脉冲功率电源开关器件简化研究

doi: 10.11884/HPLPB202436.230211

张玉宸^{1, 2,},
戴玲^{1, 2, ,},
樊晟廷^{1, 2},
冯永杰^{1, 2},
林福昌^{1, 2}

1.
强电磁技术全国重点实验室（华中科技大学），武汉 430074
2.
华中科技大学电气与电子工程学院，武汉 430074

详细信息

作者简介:
张玉宸，M202172000@hust.edu.cn

通讯作者:
戴　玲，dailing@mail.hust.edu.cn。

中图分类号: TM89
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- 被引次数: 0
出版历程
- 收稿日期: 2023-07-08
- 修回日期: 2023-09-13
- 录用日期: 2023-09-15
- 网络出版日期: 2023-09-18
- 刊出日期: 2024-01-12

Research on switching devices simplification of multistage XRAM pulse power supply

Zhang Yuchen^{1, 2
,},
Dai Ling^{1, 2
, ,},
Fan Shengting^{1, 2},
Feng Yongjie^{1, 2},
Lin Fuchang^{1, 2}

1.
State Key Laboratory of Advanced Electromagnetic Technology (Huazhong University of Science and Technology), Wuhan 430074, China
2.
School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China

摘要

摘要: 电磁发射的能力主要取决于脉冲功率电源系统，脉冲功率电源的优化是电磁发射技术取得进一步突破的关键技术之一。电感储能型脉冲功率电源在能量密度方面有很大优势，具备深远的发展潜力。基于串联充电和并联放电的XRAM型脉冲功率电源具有结构简单、可扩展性强的优点。分析了多级XRAM电源拓扑结构中二极管器件的工作原理，按照功能分类，提出了简化二极管器件数量的方案。建立了基于ICCOS的30级XRAM型脉冲功率电源带轨道炮负载的仿真模型，每5级为一个电源模块，系统总储能为365 kJ，发射效率近20%。通过对比简化前后模型性能指标的仿真结果，证明了简化第一级的下臂二极管不利于多级电源的运行。简化多级拓扑中的最后一级逆流电容串联二极管，以及在优化逆流电容参数的前提下简化充电晶闸管的反并二极管，对电源模块的放电电流没有明显影响。
- 电磁发射 /
- 电感储能 /
- XRAM /
- 二极管 /
- 模块化
Abstract: The ability of electromagnetic emission mainly depends on the pulse power supply system, and the optimization of pulse power supply is one of the key technologies to make further breakthroughs in electromagnetic emission technology. Inductive energy storage type pulse power supply has great advantages in energy density and has far-reaching development potential. The XRAM pulse power supply based on series charging and parallel discharge has the advantages of simple structure and strong expandability. In this paper, the working principle of diode devices in multilevel XRAM power supply topology is analyzed, and a scheme is proposed to simplify the number of diode devices based on function classification. A simulation model is established for a 30-stage XRAM pulse power supply with a railgun load using ICCOS. Each power module consists of five stages, resulting in a total energy storage capacity of 365 kJ for the system, with an emission efficiency of nearly 20%. By comparing the simulation results of model performance indexes before and after simplification, it is proved that the simplified lower arm diode of the first stage is unfavorable to the operation of the multistage power supply. Simplifying the final countercurrent capacitor series diode in the multistage topology, and the antiparallel diode of charging thyristor under the premise of optimizing the countercurrent capacitor parameters, have no obvious effect on the discharge current of the power module.
- electromagnetic launching /
- inductive pulsed power supply /
- XRAM /
- diode /
- modularization

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图 1 带ICCOS的多级XRAM电源拓扑图

Figure 1. Multilevel XRAM power topology with ICCOS

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图 2 电感充电过程中电感-逆流电容回路示意图

Figure 2. Schematic diagram of inductor-countercurrent capacitor loop

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图 3 去除逆流电容串联二极管后各级逆流电容电压波形

Figure 3. Voltage waveform of countercurrent capacitor after removing series diode of countercurrent capacitor

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图 4 轨道炮负载等效电路

Figure 4. Equivalent circuit of railgun load

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图 5 轨道炮负载模型计算框图

Figure 5. Calculation block diagram of railgun load model

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图 6 Simulink仿真波形

Figure 6. Simulated waveform in Simulink

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表 1 系统仿真参数选取

Table 1. Selection of system simulation parameters

symbol	quantity	value
U_s	voltage of single module charging capacitor	2440 V
L_s	single stage energy storage inductance	75 μH
R_s	single stage energy storage resistance	3 mΩ
C	countercurrent capacitance	100 μH
U_C	recharge voltage of countercurrent capacitor	3500 V
L₀	initial rail inductance	0.1 μH
R₀	initial rail resistance	0.1 mΩ
$ {L_{\text{r}}}^\prime $	rail inductance gradient	0.5 μH/m
$ {R_{\text{r}}}^\prime $	rail resistance gradient	0.1 mΩ/m
R_VC	velocity skin effect contact resistance constant	10⁻⁸ Ω/(m/s)^−2/3
μ_h	static friction coefficient	0.05
μ_g	limit value of dynamic friction coefficient	0.45
c	formula constant of sliding friction coefficient	0.03
S_c	contact area between armature and rail	5.5×10⁻³ m²
A	cross-sectional area of projectile	6.25×10⁻⁴ m²
k₁	ratio of radial stress to axial stress	0.025
ρ	density of dry air	1.293 g/L
C₀	air drag coefficient	0.5

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表 2 仿真结果对比

Table 2. Comparison of simulation results

simulation type	peak load current I_m/kA	50%～50% pulse width T_w/ms	projectile exit velocity v_m/(m/s)	emission efficiency η/%	emission efficiency without countercurrent capacitance η₀/%
initial model	540.4	1.820	1532	18.39	19.32
remove D₅₃	540.8	1.820	1534	18.44	19.37
remove D₁₂	513.2	1.772	1540	18.57	19.51
remove D₅₃ and D₁₂	513.2	1.774	1541	18.62	19.55
remove D₁～D₅	540.7	1.819	1532	18.39	19.32

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表 3 充电晶闸管端电压变化

Table 3. Voltage change of charging thyristor

recharge voltage of countercurrent capacitance U_cc /V	T₁ maximum reverse voltage U_rm1/V	T₂ maximum reverse voltage U_rm2/V	T₁ maximum forward voltage U_fm1/V	T₂ maximum forward voltage U_fm2/V
3500	−1388	−1389	991.2	392.6
3700	−1602	−1603	993.8	395.8
4100	−2304	−2305	999.3	400.7
4300	−2761	−2762	1002.0	403.4
4700	−3486	−3487	1008.0	409.0
4900	−3559	−3560	1011.0	412.0

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表 4 电源模块简化程度与级数的关系

Table 4. Relationship between simplification degree and series of power modules

power supply stages	total number of switching devices before simplification	total number of switching devices after simplification	quantity proportion of simplification/%
2	11	8	27.3
3	16	12	25.0
4	21	16	23.8
5	26	20	23.1
6	31	24	22.6
7	36	28	22.2
8	41	32	22.0
9	46	36	21.7
10	51	40	21.6

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