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高速SiC-MOSFET叠层封装结构设计及性能评估

马久欣 马剑豪 任吕衡 余亮 姚陈果 董守龙

马久欣, 马剑豪, 任吕衡, 等. 高速SiC-MOSFET叠层封装结构设计及性能评估[J]. 强激光与粒子束, 2024, 36: 025019. doi: 10.11884/HPLPB202436.230212
引用本文: 马久欣, 马剑豪, 任吕衡, 等. 高速SiC-MOSFET叠层封装结构设计及性能评估[J]. 强激光与粒子束, 2024, 36: 025019. doi: 10.11884/HPLPB202436.230212
Ma Jiuxin, Ma Jianhao, Ren Lüheng, et al. High speed package-on-package structure designed for SiC-MOSFET and its performance evaluation[J]. High Power Laser and Particle Beams, 2024, 36: 025019. doi: 10.11884/HPLPB202436.230212
Citation: Ma Jiuxin, Ma Jianhao, Ren Lüheng, et al. High speed package-on-package structure designed for SiC-MOSFET and its performance evaluation[J]. High Power Laser and Particle Beams, 2024, 36: 025019. doi: 10.11884/HPLPB202436.230212

高速SiC-MOSFET叠层封装结构设计及性能评估

doi: 10.11884/HPLPB202436.230212
基金项目: 国家自然科学基金项目(52277135);国防科技大学脉冲功率激光技术国家重点实验室开放基金项目(SKL2020KF02);重庆市研究生科研创新项目(CYB23027)
详细信息
    作者简介:

    马久欣,15542817645@163.com

    通讯作者:

    余 亮,yu_liang@cqu.edu.cn

  • 中图分类号: TN78

High speed package-on-package structure designed for SiC-MOSFET and its performance evaluation

  • 摘要: 作为脉冲系统的核心部件,开关承担着脉冲成形、功率调制等重要作用,开关通断速度往往决定脉冲上升时间,高速开关是纳秒短脉冲形成的关键。提出一种高速SiC-MOSFET叠层封装结构,整体布局无引线、无外接,具有极低寄生电感。开展了电磁场仿真研究,揭示了脉冲形成过程中封装多介质界面电磁场分布规律,明确了封装结构电磁薄弱环节,为进一步绝缘优化提供指导。搭建双脉冲测试平台,对研制的SiC-MOSFET叠层封装开关与同芯片商用TO-263-7封装开关的动态性能进行测试。结果表明,大电流工况下,所提封装电流开通速度提升48%,关断速度提升50%,开通损耗降低54.6%,关断损耗降低62.8%,实验结果验证了所提叠层封装结构对开关动态性能的改善。
  • 图  1  极低寄生电感叠层结构内部示意图

    Figure  1.  Schematic diagram of the interior of the package-on-package (PoP) structure

    图  2  叠层封装模块整体概图

    Figure  2.  Overall overview of the PoP structure

    图  3  脉冲形成过程的叠层封装磁场空间变化

    Figure  3.  Spatial variation of magnetic field of laminated package during pulse formation

    图  4  脉冲平顶阶段叠层封装的磁密矢量分布

    Figure  4.  Magnetic density vector distribution of the PoP structure in pulse flat top stage

    图  5  脉冲平顶阶段叠层封装的电流密度分布

    Figure  5.  Current density distribution of the PoP structure in pulse flat top stage

    图  6  开关特性测试电路原理图

    Figure  6.  Schematic diagram of switching characteristic test circuit

    图  7  开关特性测试电路

    Figure  7.  Switch characteristic test experimental circuit

    图  8  额定电流36 A时TO-263与PoP封装双脉冲测试对比波形

    Figure  8.  Comparison of double pulse test waveforms at rated current 36 A between TO-263 and PoP switches

    图  9  极限脉冲电流90 A时TO-263与PoP封装双脉冲测试对比波形

    Figure  9.  Comparison of double pulse test waveforms when the pulse current is 90 A between TO-263 and PoP switches

    表  1  特性评估实验参数

    Table  1.   Experimental parameters for characteristic evaluation

    Csave/μFLsave/μHUg.sta-off/VRg.current/mΩUg.on/VUg.off/VRdampchip of PoP
    575−92015−95CPM3-0065-1000B
    下载: 导出CSV

    表  2  额定电流36 A时TO-263与PoP封装开关的参数对比

    Table  2.   Comparison of TO-263 and PoP switch parameters at a rated current of 36 A

    packageUds(turn-on)/nsUds(turn-off)/nsid(turn-on)/nsid(turn-off)/nsPloss(turn-on)/μJPloss(turn-off)/μJUds/V
    TO-2634.32.76.123.880.9320.1954
    PoP4.02.64.16.869.9212.3955
    下载: 导出CSV

    表  3  极限脉冲电流90 A时TO-263与PoP封装开关的参数对比

    Table  3.   Comparison of TO-263 and PoP switch parameters when the limit pulse current is 90 A

    packageUds(turn-on)/nsUds(turn-off)/nsid(turn-on)/nsid(turn-off)/nsPloss(turn-on)/μJPloss(turn-off)/μJUds/V
    TO-2633.82.222.915.8285.81168.4739
    PoP3.42.111.97.9129.5433.8735
    下载: 导出CSV
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出版历程
  • 收稿日期:  2023-07-09
  • 修回日期:  2023-10-25
  • 录用日期:  2023-10-25
  • 网络出版日期:  2023-10-30
  • 刊出日期:  2024-01-12

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