Load mismatch effects to heterojunction bipolar transistor device based on waveform measurement
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摘要: 大功率电磁脉冲冲击下，射频集成微系统内部容易产生负载失配问题，严重者可能导致系统失效甚至损毁。采用实时的波形测试方法，对射频器件的负载失配进而导致器件损毁的机理进行了分析。该方法以矢量网络分析仪作为主要测试仪器，结合回波信号注入和相位参考模块获得待测器件实时电压电流波形，进而分析其负载失配影响机制。采用有源负载牵引技术模拟大功率耦合电磁脉冲注入，进行了电压驻波比39∶1的失配测试，大幅提升了测试范围。创新性地采用了谐波信号源注入模拟杂散谐波电磁干扰，评估器件的谐波阻抗失配特性。通过实际异质结双极型晶体管（HBT）器件测试的结果表明，基波的失配会造成负载端电压过大，增加器件的易损性；基波和谐波频率的干扰分量组合使得输出电压瞬态峰值升高，造成器件的损毁。在进行电磁安全防护时，应同时考虑基波和谐波频率的防护。Abstract: Under the impact of high-power electromagnetic pulses, RF integrated microsystems are prone to generate load mismatch, which may lead to system failure or even damage. Based on a real-time waveform test method, this paper analyzes the mechanism of load mismatch of RF devices leading to device damage. This method utilizes vector network analyzer as the main instrument, obtaining the real-time voltage and current waveforms with reflection signal and phase reference module. Active load-pull technique is used to simulate high power coupled electromagnetic pulse injection and ruggedness test under 39∶1 VSWR is done. Furthermore, harmonic source injection is newly applied to simulate the electromagnetic interference caused by harmonics, obtaining the harmonic impedance mismatch characteristics of the device. The test results of actual heterojunction bipolar transistor device indicate that the combination of fundamental and harmonic interference components causes the transient peak value of the output voltage to be higher, which is more likely to damage the device. Hence the fundamental and harmonic components should be considered when conducting electromagnetic protection.
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图 6 HBT器件在二次谐波负载失配下的射频特性
Figure 6. Characteristic of HBT under 2nd harmonic load mismatch
图 7 HBT器件在基波负载失配下的射频I-V特性
Figure 7. RF I-V characteristic of HBT under fundamental load mismatch
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[1] 谢斌, 刘洁, 王波, 等. 强电磁脉冲防护技术研究[J]. 火控雷达技术, 2020, 49(2):111-115Xie Bin, Liu Jie, Wang Bo, et al. Research on strong electromagnetic pulse protection technology[J]. Fire Control Radar Technology, 2020, 49(2): 111-115 [2] 姜刚, 闫萌. 一种相控阵雷达电磁脉冲防护技术研究[C]//2021年全国微波毫米波会议论文集(上册). 2021: 3Jiang Gang, Yan Meng. Research on electromagnetic pulse protection technology of phased array radar[C]//Proceedings of the 2021 National Microwave and Millimeter Wave Conference (Volume 1). 2021: 3 [3] Laribi H, Dehkhoda P, Tavakoli A, et al. Susceptibility analysis of a low-noise amplifier against an electromagnetic pulse[J]. IET Science, Measurement & Technology, 2020, 14(10): 1044-1048. [4] Zhao Siyuan, Pan Tao, Su Jiangtao. A real-time waveform load-pull technique enabling the access to RF PA ruggedness[C]//2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM). 2021: 1-3. [5] Loescher D, Tasker P, Cripps S. Using waveform engineering to understand the impact of harmonic terminations during 5: 1 VSWR stress tests[C]//2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR). 2016: 49-52. [6] 张猛. 异质结双极晶体管HBT单边增益研究[D]. 杭州: 浙江大学, 2008Zhang Meng. Unilateral power gain of heterojunction bipolar transistor[D]. Hangzhou: Zhejiang University, 2008 [7] Deng Junxiong, Gudem P S, Larson L E, et al. A high average-efficiency SiGe HBT power amplifier for WCDMA handset applications[J]. IEEE Transactions on Microwave Theory and Techniques, 2005, 53(2): 529-537. doi: 10.1109/TMTT.2004.840629 [8] Singhal S, Li T, Chaudhari A, et al. Reliability of large periphery GaN-on-Si HFETs[J]. Microelectronics Reliability, 2006, 46(8): 1247-1253. doi: 10.1016/j.microrel.2006.02.009 [9] 陈繁, 马婷, 谭开洲, 等. SBFL结构SiGe HBT器件的击穿特性研究[J]. 微电子学, 2017, 47(3):433-436Chen Fan, Ma Ting, Tan Kaizhou, et al. Research on the breakdown characteristics of SiGe HBT with SBFL structure[J]. Microelectronics, 2017, 47(3): 433-436 [10] Formicone G, Boueri F, Burger J, et al. Analysis of bias effects on VSWR ruggedness in RF LDMOS for avionics applications[C]//Microwave Integrated Circuit Conference. 2008: 28-31. [11] McGenn W, Choi H, Lees J, et al. Development of a RF waveform stress test procedure for GaN HFETs subjected to infinite VSWR sweeps[C]//IEEE/MTT-S International Microwave Symposium Digest. 2012: 1-3. [12] Bengtsson O, Chevtchenko S, Chowdhary A, et al. VSWR testing of RF-power GaN transistors[C]//9th European Microwave Integrated Circuit Conference. 2014: 460-463. [13] 张硕. 高功率微波作用下的低噪声放大器的损坏机理及其防护研究[D]. 上海: 上海交通大学, 2016Zhang Shuo. Investigation of the destruction mechanism and protection circuit of a low noise amplifier injected by high power microwave[D]. Shanghai: Shanghai Jiao Tong University, 2016 [14] Chen J J, Gao G B, Chyi J I, et al. Breakdown behavior of GaAs/AlGaAs HBTs[J]. IEEE Transactions on Electron Devices, 1989, 36(10): 2165-2172. doi: 10.1109/16.40896 [15] Wu Y F, Keller B P, Keller S, et al. Measured microwave power performance of AlGaN/GaN MODFET[J]. IEEE Electron Device Letters, 1996, 17(9): 455-457. doi: 10.1109/55.536291 [16] 郭庭铭, 苏江涛, 刘军, 等. 一种基于双工器的谐波有源负载牵引测试系统[J]. 杭州电子科技大学学报(自然科学版), 2020, 40(6):6-12Guo Tingming, Su Jiangtao, Liu Jun, et al. A Duplexer-based harmonic active load-pull measurement system[J]. Journal of Hangzhou Dianzi University (Natural Sciences), 2020, 40(6): 6-12 [17] Jang H, Ko Y, Roblin P. Development of multiharmonic verification artifact for the LSNA and NVNA (MTT-11)[J]. IEEE Microwave Magazine, 2013, 14(1): 134-139. doi: 10.1109/MMM.2012.2226640 [18] Su Jiangtao, Yang Baoguo, Gao Haijun, et al. A novel TRM calibration method for improvement of modelling accuracy at mm-wave frequency[C]//2018 IEEE/MTT-S International Microwave Symposium - IMS. 2018: 1300-1303. [19] 赖雨瑞. 微波射频探针的去嵌入研究及测试应用[D]. 成都: 电子科技大学, 2019Lai Yurui. De-embedding research and application of microwave/RF probes[D]. Chengdu: University of Electronic Science and Technology of China, 2019 -
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