留言板

尊敬的读者、作者、审稿人, 关于本刊的投稿、审稿、编辑和出版的任何问题, 您可以本页添加留言。我们将尽快给您答复。谢谢您的支持!

姓名
邮箱
手机号码
标题
留言内容
验证码

激光触发多门极半导体开关初步研究

刘宏伟 王凌云 栾崇彪 袁建强 谢卫平 杨杰 何泱 付佳斌 徐乐

刘宏伟, 王凌云, 栾崇彪, 等. 激光触发多门极半导体开关初步研究[J]. 强激光与粒子束, 2024, 36: 115004. doi: 10.11884/HPLPB202436.240331
引用本文: 刘宏伟, 王凌云, 栾崇彪, 等. 激光触发多门极半导体开关初步研究[J]. 强激光与粒子束, 2024, 36: 115004. doi: 10.11884/HPLPB202436.240331
Liu Hongwei, Wang Lingyun, Luan Chongbiao, et al. Preliminary study on laser initiated multi-gate semiconductor switch[J]. High Power Laser and Particle Beams, 2024, 36: 115004. doi: 10.11884/HPLPB202436.240331
Citation: Liu Hongwei, Wang Lingyun, Luan Chongbiao, et al. Preliminary study on laser initiated multi-gate semiconductor switch[J]. High Power Laser and Particle Beams, 2024, 36: 115004. doi: 10.11884/HPLPB202436.240331

激光触发多门极半导体开关初步研究

doi: 10.11884/HPLPB202436.240331
基金项目: 先空着
详细信息
    作者简介:

    刘宏伟,liuhongwei00@tsinghua.org.cn

    通讯作者:

    袁建强,j.q.yuan@163.com

  • 中图分类号: TM833

Preliminary study on laser initiated multi-gate semiconductor switch

  • 摘要: 固态脉冲功率源在脉冲功率技术领域应用广泛,已经成为新的研究热点,其中,高功率固态开关器件是固态脉冲功率源的核心。报道了一种新型光触发多门极半导体开关(LIMS),该开关具备光致线性模式和场致增益模式两种工作模式,解决了传统电控器件电流上升率低的问题,实现了器件的高电流上升率,光致线性模式下实验测试得到了454 kA/μs的电流上升率,该开关在雷管起爆、电磁脉冲模拟等领域已得到初步应用。
  • 图  1  光触发多门极半导体开关结构示意图及芯片实物图

    Figure  1.  Structural schematic diagram and physical chip diagram of laser initiated multi-gate semiconductor switch

    图  2  激光脉冲波形

    Figure  2.  Test the physical circuit and laser pulse waveform

    图  3  1.7 mJ触发能量和1.2 mJ触发能量时不同电压的放电波形

    Figure  3.  Discharge waveforms at different voltages with trigger energies of 1.7 mJ and 1.2 mJ

    图  4  0.2 mJ触发能量和0.02 mJ触发能量时不同电压的放电波形

    Figure  4.  Discharge waveforms at different voltages with trigger energies of 0.2 mJ and 0.02 mJ

    图  5  高电压不同触发能量时放电波形

    Figure  5.  Discharge waveform under different triggering energies of high voltage

    图  6  三种触发能量条件下模拟与测试的对比

    Figure  6.  Comparison of simulation and testing under three triggering energy conditions

    图  7  电阻与触发能量关系拟合曲线

    Figure  7.  Fitting curve of the relationship between resistance and trigger energy

    图  8  测试结构及典型放电波形

    Figure  8.  Test structure and typical discharge waveform

    图  9  微秒脉冲放电测试结构及典型放电波形(10发次叠加)

    Figure  9.  Microsecond pulse discharge test structure and typical discharge waveform (10 cycles stacked)

    图  10  固态起爆器实物及典型放电电流波形

    Figure  10.  Solid state detonator and typical discharge current waveform

    图  11  全固态脉冲电流注入源输出波形

    Figure  11.  Output waveform of all solid state pulse current injection source

  • [1] 江伟华. 基于固态器件的高重频脉冲功率技术[J]. 强激光与粒子束, 2010, 22(3):561-564 doi: 10.3788/HPLPB20102203.0561

    Jiang Weihua. High repetition-rate pulsed power generation using solid-state switches[J]. High Power Laser and Particle Beams, 2010, 22(3): 561-564 doi: 10.3788/HPLPB20102203.0561
    [2] 丁臻捷, 浩庆松, 苏建仓, 等. 基于半导体断路开关的8MW, 10kHz脉冲发生器[J]. 强激光与粒子束, 2009, 21(10):1575-1578

    Ding Zhenjie, Hao Qingsong, Su Jiancang, et al. 8MW, 10kHz semiconductor opening switch pulsed generator[J]. High Power Laser and Particle Beams, 2009, 21(10): 1575-1578
    [3] 杨海燕, 刘纯亮. 基于半导体断路开关的脉冲功率源及其应用[J]. 真空电子技术, 2008(1):12-15 doi: 10.3969/j.issn.1002-8935.2008.01.004

    Yang Haiyan, Liu Chunliang. SOS-based pulsed power generator and its applications[J]. Vacuum Electronics, 2008(1): 12-15 doi: 10.3969/j.issn.1002-8935.2008.01.004
    [4] 王刚, 苏建仓, 丁臻捷, 等. 基于SOS和LTD技术的高重复频率脉冲发生器[J]. 强激光与粒子束, 2014, 26:045011 doi: 10.11884/HPLPB201426.045011

    Wang Gang, Su Jiancang, Ding Zhenjie, et al. Repetitive frequency pulsed generator based on semiconductor opening switch and linear transformer driver[J]. High Power Laser and Particle Beams, 2014, 26: 045011 doi: 10.11884/HPLPB201426.045011
    [5] 梁琳, 余岳辉, 尚超. 大功率RSD开关多单元并联技术[J]. 高电压技术, 2009, 35(2):329-334

    Liang Lin, Yu Yuehui, Shang Chao. Multi-cell parallel connection technology for great power switch RSD[J]. High Voltage Engineering, 2009, 35(2): 329-334
    [6] Cassel R L, Hitchcock R N, Hitchcock S S. A high power dynamically flexible pulse width radar modulator[C]//Proceedings of 2007 16th IEEE International Pulsed Power Conference. 2007: 1492-1494.
    [7] 李洪涛, 王传伟, 王凌云, 等. 500 kV全固态Marx发生器[J]. 强激光与粒子束, 2012, 24(4):917-920 doi: 10.3788/HPLPB20122404.0917

    Li Hongtao, Wang Chuanwei, Wang Lingyun, et al. 500 kV all-solid-state Marx generator[J]. High Power Laser and Particle Beams, 2012, 24(4): 917-920 doi: 10.3788/HPLPB20122404.0917
    [8] 江伟华. 高重复频率脉冲功率技术及其应用: (5)脉冲叠加的意义[J]. 强激光与粒子束, 2013, 25(8):1877-1882 doi: 10.3788/HPLPB20132508.1877

    Jiang Weihua. Repetition rate pulsed power technology and its applications: (Ⅴ) the implication of pulse adding[J]. High Power Laser and Particle Beams, 2013, 25(8): 1877-1882 doi: 10.3788/HPLPB20132508.1877
    [9] Rao Junfeng, Zhu Yicheng, Wang Yonggang, et al. Study on the basic characteristics of solid-state linear transformer drivers[J]. IEEE Transactions on Plasma Science, 2020, 48(9): 3168-3175. doi: 10.1109/TPS.2020.3013292
    [10] 刘宏伟, 李洪涛, 王传伟, 等. 基于IGBT开关的重复频率直线变压器[J]. 强激光与粒子束, 2011, 23(8):2243-2246 doi: 10.3788/HPLPB20112308.2243

    Liu Hongwei, Li Hongtao, Wang Chuanwei, et al. Repetitive linear transformer driver based on IGBTs[J]. High Power Laser and Particle Beams, 2011, 23(8): 2243-2246 doi: 10.3788/HPLPB20112308.2243
    [11] 张良, 秦玲, 黄子平, 等. MHz重复频率固体调制器实验研究[J]. 强激光与粒子束, 2009, 21(8):1250-1254

    Zhang Liang, Qin Ling, Huang Ziping, et al. Experimental research on MHz repetition rate solid-state modulator[J]. High Power Laser and Particle Beams, 2009, 21(8): 1250-1254
    [12] Nunnally W C. Critical component requirements for compact pulse power system architectures[J]. IEEE Transactions on Plasma Science, 2005, 33(4): 1262-1267. doi: 10.1109/TPS.2005.852406
    [13] 姜苹, 田青, 李洪涛, 等. 基于光导开关及层叠Blumlein线的纳秒脉冲源[J]. 强激光与粒子束, 2013, 25(4):1063-1067 doi: 10.3788/HPLPB20132504.1063

    Jiang Ping, Tian Qing, Li Hongtao, et al. Nanosecond-pulsed power source based on photoconductive semiconductor switches and stacked Blumlein line[J]. High Power Laser and Particle Beams, 2013, 25(4): 1063-1067 doi: 10.3788/HPLPB20132504.1063
    [14] Ma Xun, Deng Jianjun, Liu Hongwei, et al. Development of all-solid-state flash X-ray generator with photoconductive semiconductor switches[J]. Review of Scientific Instruments, 2014, 85(9): 093307. doi: 10.1063/1.4895829
    [15] Luan Chongbiao, Liu Hongwei, Fu Jiabin, et al. Study of a Si-based light initiated multi-gate semiconductor switch for high temperatures[J]. Scientific Reports, 2022, 12(1): 15508. doi: 10.1038/s41598-022-19767-4
    [16] 郭帆, 何小平, 王海洋, 等. 晶闸管触发开通特性[J]. 强激光与粒子束, 2012, 24(10):2483-2487 doi: 10.3788/HPLPB20122410.2483

    Guo Fan, He Xiaoping, Wang Haiyang, et al. Switching characteristics of triggered thyristor[J]. High Power Laser and Particle Beams, 2012, 24(10): 2483-2487 doi: 10.3788/HPLPB20122410.2483
    [17] Luan Chongbiao, Liu Hongwei, Ma Xun, et al. All-solid-state pulsed current injection source based on the light initiated multi-gate semiconductor switches[J]. Review of Scientific Instruments, 2022, 93(1): 014705. doi: 10.1063/5.0076291
  • 加载中
图(11)
计量
  • 文章访问数:  100
  • HTML全文浏览量:  35
  • PDF下载量:  23
  • 被引次数: 0
出版历程
  • 收稿日期:  2024-09-15
  • 修回日期:  2024-10-27
  • 录用日期:  2024-10-27
  • 网络出版日期:  2024-10-31
  • 刊出日期:  2024-11-01

目录

    /

    返回文章
    返回