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贫化铀的等离子氮化处理

龙重 薛亚斌 徐庆东 罗丽珠 陆雷 胡殷 刘柯钊

龙重, 薛亚斌, 徐庆东, 等. 贫化铀的等离子氮化处理[J]. 强激光与粒子束, 2024, 36: 126002. doi: 10.11884/HPLPB202436.240359
引用本文: 龙重, 薛亚斌, 徐庆东, 等. 贫化铀的等离子氮化处理[J]. 强激光与粒子束, 2024, 36: 126002. doi: 10.11884/HPLPB202436.240359
Long Zhong, Xue Yabin, Xu Qingdong, et al. Plasma nitriding of depleted uranium[J]. High Power Laser and Particle Beams, 2024, 36: 126002. doi: 10.11884/HPLPB202436.240359
Citation: Long Zhong, Xue Yabin, Xu Qingdong, et al. Plasma nitriding of depleted uranium[J]. High Power Laser and Particle Beams, 2024, 36: 126002. doi: 10.11884/HPLPB202436.240359

贫化铀的等离子氮化处理

doi: 10.11884/HPLPB202436.240359
基金项目: 国家自然科学基金项目(U2230205)
详细信息
    作者简介:

    龙 重,long2001@163.com

  • 中图分类号: TG178

Plasma nitriding of depleted uranium

  • 摘要: 为了提高贫化铀表面耐腐蚀性能,利用三种等离子氮化技术(等离子源离子注入Plasma Source Ion Implantation - PSII、辉光放电等离子氮化Glow Discharge Plasma Nitriding - GDPN、空心阴极等离子氮化Hollow Cathode Plasma Nitriding - HCPN)在贫化铀表面制备了氮化层。通过多种材料分析手段对氮化层成分、结构、化学状态进行了分析。三种氮化层中的氮化物都以α-U2N3为主,由于金属铀与氧的亲和力较强,三种等离子氮化过程都不同程度的引入了氧杂质。PSII可以突破热力学平衡,将部分氧化物转化为氮化物。GDPN和HCPN则通过表面反应和热扩散形成氮化物层。HCPN技术对控制氧杂质有一定优势,可以显著降低氮化层中氧杂质含量。湿热腐蚀和电化学测试表明,等离子氮化可以明显提升贫化铀的抗腐蚀性能,HCPN和GDPN的提升程度要优于PSII,而HCPN技术最优。本文的研究结果可为活性金属的等离子氮化处理提供参考。
  • 图  1  三种等离子氮化装置的示意图

    Figure  1.  Schematic of three plasma nitriding devices

    图  2  三种氮化样品的XRD数据

    Figure  2.  XRD data of nitride samples

    图  3  三种氮化样品的AES数据

    Figure  3.  AES data of nitride samples

    图  4  三种氮化样品的XPS数据

    Figure  4.  XPS data of three nitride samples

    图  5  PSII样品和GDPN样品湿热腐蚀前后的AES分析数据

    Figure  5.  AES data of PSII sample and GDPN sample before and after wet heat corrosion

    图  6  HCPN样品、GDPN样品、PSII样品、未处理样品的电化学极化曲线

    Figure  6.  Electrochemical polarization curves of HCPNsample, GDPN sample, PSII sample, and untreated sample

    表  1  实验材料

    Table  1.   Purity of experimental materials

    Experimental
    Materials
    Impurities/(ppm)
    Carbon Nitrogen Oxygen H2O Others
    Uranium 200 45 <150
    Nitrogen <3 <3 <5 <1
    下载: 导出CSV

    表  2  主要工艺参数

    Table  2.   Process parameters

    Process Base
    Presure/(Pa)
    Voltage/
    (kV)
    Frequence/
    (kHz)
    Pulse
    Width/(μs)
    Current density/
    (mA.cm−2)
    Process
    time/(h)
    Vacuum
    temperature/(℃)
    PSII 8×10−4 50 0.4 40 ~0.1 2 220
    GDPN 3×10−4 0.9 60 1.5 ~1 2 350
    HCPN 3×10−4 0.6 60 0.5 ~20 2 130
    下载: 导出CSV
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出版历程
  • 收稿日期:  2024-09-13
  • 修回日期:  2024-10-25
  • 录用日期:  2024-10-25
  • 网络出版日期:  2024-10-29
  • 刊出日期:  2024-11-08

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