Total ionizing dose effect on gate drivers fabricated by BCD technology
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摘要: 针对一款BCD工艺栅极驱动器，采用环栅结构进行总剂量效应加固。通过60Co γ辐照试验，对比了加固和非加固器件电学参数随剂量变化情况。结果表明，总剂量辐射会导致器件的输出电压与电流特性发生退化，出现转换电压下降与输出电流上升的现象，同时发现总剂量辐射对输出电阻几乎无影响。对比两种栅极驱动器辐照前后的测试结果，证明环栅加固方法对抑制总剂量辐射引起的边缘漏电有一定的效果，但辐照总剂量达到500 krad(Si)时，加固器件发生功能失效。通过仿真模拟各级晶体管辐射损伤对器件最终输出结果的影响，确定初级施密特反相器内阈值电压漂移影响转换电压，而末级晶体管阈值电压漂移导致输出高电平下降。Abstract: The BCD technology integrates Bipolar, Complementary Metal Oxide Semiconductor (CMOS), and Double Diffused MOSFET (DMOS) within a single chip, widely utilized in electronic components and system production. Gate drivers fabricated by BCD technology can reduce transmission delays, lower power consumption, and enhance drive capabilities. However, the radiation effects in space environments may lead to performance degradation and potentially jeopardize the safety of spacecraft. This paper focuses on gate drivers based on BCD technology, employing an enclosed layout structure for total ionizing dose (TID) radiation hardening. Through TID irradiation tests, the electrical parameter variations between hardened and unhardened devices are compared. Results indicate that TID radiation causes degradation in the output voltage and current characteristics of the device, manifesting as a decrease in switching voltage and an increase in output current, while having a negligible impact on the output resistance. Comparing test outcomes from both types of drivers, it is evident that the ring-gate hardening method effectively mitigates edge leakage induced by TID radiation to a certain extent. Nevertheless, functional failure occurs in the devices at 500 krad(Si).
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Key words:
- BCD technology /
- gate driver /
- total ionizing dose effect /
- enclosed layout device
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图 2 非加固器件输出电压随辐照剂量的变化
Figure 2. Variation of output voltage of unhardened devices with irradiation dose
图 3 加固器件输出电压随辐照剂量的变化
Figure 3. Variation of output voltage of hardened devices with irradiation dose
图 4 非加固器件输出电流随辐照剂量的变化
Figure 4. Variation of output current of unhardened devices with irradiation dose
图 5 加固器件输出电流随辐照剂量的变化
Figure 5. Variation of output current of hardened devices with irradiation dose
图 6 非加固器件各端口输出电阻随辐照剂量变化情况
Figure 6. Variation of output resistance of unhardened devices with irradiation dose
图 7 加固器件各端口输出电阻随辐照剂量变化情况
Figure 7. Variation of output resistance of hardened devices with irradiation dose
图 9 仿真电路输出电压随输入电压的变化曲线
Figure 9. Simulation curve of output voltage varying with input voltage in the circuit
图 10 仿真电路输出电压曲线随施密特反相器内器件阈值电压漂移程度的变化
Figure 10. Simulation curves of output voltage variation with threshold voltage shift in MOSFETs within the Schmitt trigger inverter
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