Research progress on high-brightness electron source drive laser system
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摘要: 光阴极电子源是先进加速器装置最为关键的部件,驱动激光的品质参数是电子源性能的首要决定因素。近年来,电子加速器装置的束流指标不断提升,要求驱动激光具备高功率、高稳定性等特点和时空分布调控的功能,这对驱动激光系统的放大、选频、倍频、时空整形等模块提出了更高的需求。国内外主要研究机构根据其电子源的需求采用了相应的技术路线,在重复频率、激光波长、单脉冲能量和时空分布整形等方面各有特点。本文介绍了高亮度电子源驱动激光的主要技术路线和国内外发展现状,分析了典型的驱动激光方案,并讨论了驱动激光系统的未来发展趋势,以期为相关装置的规划和建设提供参考。Abstract: Photocathode electron sources play a crucial role in advanced accelerator facilities. Recent advancements in electron accelerator facilities have continually pushed the parameter boundaries of electron sources, which in turn necessitate photocathode drive lasers that possess high power, high stability, and the ability to control spatiotemporal distributions. For such a purpose, lots of efforts have been made to achieve high-quality amplification, harmonic generation, and spatiotemporal shaping of the drive laser systems. This paper presents a comprehensive review of the primary technological approaches and status of drive lasers for high-brightness electron sources worldwide. Analysis of representative drive laser schemes and discussion on the future trends are also included, aiming to provide a helpful reference for planning and developing high-performance photocathode drive laser system.
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Key words:
- photocathode laser /
- laser amplification /
- laser harmonic generation /
- laser shaping /
- laser stability
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图 19 EuXFEL注入器布局图[16]
Figure 19. Injector building layout at EuXFEL[16]
表 1 典型装置Ⅰ类放大器输出参数
Table 1. Output parameters of class Ⅰ amplifiers in typical facilities
facility amplifier center wavelength/nm pulse energy/mJ repetition rate/Hz SXFEL Ti:sapphire 800.0 10.0 10/50 HALF Ti:sapphire 800.0 13.0 1~100 TTX Ti:sapphire 800.0 200.0 10 SAPS Ti:sapphire 800.0 13.0 1~100 PAL-XFEL Ti:sapphire 770.0 20.8 120 FERMI Ti:sapphire 783.0 18.0 50 SwissFEL Yb:CaF2 1 041.3 2.4 10 SuperKEKB Yb-doped fiber/Nd:YAG hybrid 1 064.0 20.0 1~25 表 2 典型装置Ⅱ类放大器输出参数
Table 2. Output parameters of class Ⅱ amplifiers in typical facilities
facility amplifier center wavelength/nm pulse energy/μJ repetition rate/MHz FLASH Yb-doped fiber/Yb:YAG hybrid 1030 180 1 EuXFEL Nd:YVO4 1064 50 0.5/1.13/2.25/4.5 LCLS-II Yb-doped fiber 1030 50 0~0.929 DC-SRF-II Yb-doped fiber 1030 20 1 S3FEL Yb-doped fiber 1030 50 1 SHINE Yb-doped fiber 1030 150 1 表 3 典型装置Ⅲ类放大器输出参数
Table 3. Output parameters of class Ⅲ amplifiers in typical facilities
facility amplifier center wavelength/nm average power/W repetition rate/MHz Cornell-ERL Yb-doped fiber 1040 167.0 1300 PAPS Yb-doped fiber 1030 116.3 81.25/100/ 1300 KEK-ERL Yb-doped fiber (solid-state oscillator) 1064 50.0 1300 DC-SRF-II Yb-doped fiber 1030 99.3 81.25 表 4 典型装置倍频模块输出参数
Table 4. Output parameters of harmonic generation module in typical facilities
facility frequency conversion method crystal center wavelength/nm pulse energy repetition rate FLASH FHG LBO+BBO 257.5 6.1 μJ/11.2 μJ 1 MHz LCLS-II FHG BBO 257.5 300 nJ 0~0.929 MHz S3FEL FHG BBO 257.5 2 μJ 1 MHz SHINE FHG LBO+BBO 257.5 2 μJ 1 MHz SwissFEL FHG BBO 260 600 μJ 10 Hz EuXFEL FHG LBO+BBO 266 5 μJ 4.5 MHz SuperKEKB FHG BBO 266 1 mJ 25 Hz TTX THG BBO 266.7 1 mJ 10 Hz SXFEL THG BBO 266.7 1.2 mJ 10 Hz/50 Hz HALF THG BBO 266.7 2 mJ 1~100 Hz SAPS THG BBO 266.7 2 mJ 1~100 Hz FERMI THG BBO 261 2.3 mJ 50 Hz DC-SRF-II SHG LBO 515 2 μJ/170 nJ 1 MHz/81.25 MHz Cornell-ERL SHG LBO 520 95 nJ 1.3 GHz KEK-ERL SHG LBO 532 0.77 nJ 1.3 GHz PAPS SHG LBO 515 492 nJ 81.25 MHz -
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