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可级联的压控晶闸管同步驱动电路

王文东 吴朝阳 王淦平 吴编 杨周炳

王文东, 吴朝阳, 王淦平, 等. 可级联的压控晶闸管同步驱动电路[J]. 强激光与粒子束, 2025, 37: 025002. doi: 10.11884/HPLPB202537.240334
引用本文: 王文东, 吴朝阳, 王淦平, 等. 可级联的压控晶闸管同步驱动电路[J]. 强激光与粒子束, 2025, 37: 025002. doi: 10.11884/HPLPB202537.240334
Wang Wendong, Wu Zhaoyang, Wang Ganping, et al. Cascadable synchronous drive circuit for voltage controlled thyristor[J]. High Power Laser and Particle Beams, 2025, 37: 025002. doi: 10.11884/HPLPB202537.240334
Citation: Wang Wendong, Wu Zhaoyang, Wang Ganping, et al. Cascadable synchronous drive circuit for voltage controlled thyristor[J]. High Power Laser and Particle Beams, 2025, 37: 025002. doi: 10.11884/HPLPB202537.240334

可级联的压控晶闸管同步驱动电路

doi: 10.11884/HPLPB202537.240334
基金项目: 高功率微波技术重点实验室基金(61426050105);中物院军民融合科研发展基金项目
详细信息
    作者简介:

    王文东,wangwd@alu.cqu.edu.cn

  • 中图分类号: TM832

Cascadable synchronous drive circuit for voltage controlled thyristor

  • 摘要: 针对压控晶闸管脉冲工作特性和串联使用需求,设计了一种可级联的驱动电路,实现了多级串联压控晶闸管的同步开通。首先,介绍了电路拓扑及工作原理,利用推挽结构的平面耦合电感器隔离初、次级信号并传递驱动能量,解决了串联驱动小型化和低压供电条件下快前沿输出的问题;其次,通过计算和仿真确定了电路参数和主要器件选型;最后,使用6级串联的MCT作为放电开关搭建了测试电路,在充电电压8.4 kV、工作重复频率20 Hz条件下,4 Ω电阻负载上获得了幅值为1.958 kA的准方波脉冲电流。
  • 图  1  驱动电路原理图

    Figure  1.  Schematic diagram of driving circuit

    图  2  驱动电路时序图

    Figure  2.  Timing diagrams of driving circuit

    图  3  耦合电感器等效电路

    Figure  3.  Equivalent circuit of coupled inductor

    图  4  耦合电感器结构

    Figure  4.  Structure of coupled inductor structure

    图  5  驱动电路波形

    Figure  5.  Driving waveform

    图  6  测试电路

    Figure  6.  Test Circuit

    图  7  负载电流波形

    Figure  7.  Load current waveform

    表  1  耦合电感器参数

    Table  1.   Parameters of coupling inductor

    L(P1)/nH L(P2)/nH L(S1, S2)/nH Lm(P1-S1, S2)/nH Lm(P2-S1, S2)/nH
    173 139 639 233 203
    下载: 导出CSV
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    Rao Junfeng, Song Ziming, Wang Yonggang, et al. Sub-microsecond high voltage pulse power supply based on magnetic isolated driving[J]. High Power Laser and Particle Beams, 2021, 33: 115002 doi: 10.11884/HPLPB202133.210332
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    Li Xiqin, Wu Hongguang, Luan Chongbiao, et al. Design of nanosecond all-solid-state pulse source based on MOSFET semiconductor switch[J]. High Power Laser and Particle Beams, 2017, 29: 045002 doi: 10.11884/HPLPB201729.160475
    [5] Wang Liming, Zhang Zhengquan, Liu Qingxiang, et al. A solid-state pulse generator based on multilayer ceramic capacitors and insulated gate bipolar transistors[J]. Review of Scientific Instruments, 2020, 91: 054703. doi: 10.1063/1.5144479
    [6] 朱晓光, 张政权, 刘庆想, 等. 脉冲功率应用的IGBT快速驱动电路[J]. 强激光与粒子束, 2018, 30:015001 doi: 10.11884/HPLPB201830.170330

    Zhu Xiaoguang, Zhang Zhengquan, Liu Qingxiang, et al. High speed IGBT gate driving circuit applied to pulsed power system[J]. High Power Laser and Particle Beams, 2018, 30: 015001 doi: 10.11884/HPLPB201830.170330
    [7] 孙瑞泽, 陈万军, 刘超, 等. 压控型脉冲功率半导体器件技术及应用[J]. 强激光与粒子束, 2024, 36:095001 doi: 10.11884/HPLPB202436.240120

    Sun Ruize, Chen Wanjun, Liu Chao, et al. Technology and application of the voltage-controlled pulse power semiconductor devices[J]. High Power Laser and Particle Beams, 2024, 36: 095001 doi: 10.11884/HPLPB202436.240120
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出版历程
  • 收稿日期:  2024-09-20
  • 修回日期:  2024-12-02
  • 录用日期:  2024-12-02
  • 网络出版日期:  2024-12-14
  • 刊出日期:  2025-02-12

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