Response characteristics of intrinsic back-illuminated lateral silicon carbide photoconductive switches
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摘要: 平面碳化硅光导开关因可采用本征光触发而具有实现高光电增益的特点，但正面与背面光入射两种触发方式在响应特性上存在显著差异。基于TCAD数值仿真软件，对本征光背入射的平面碳化硅（SiC）光导开关的光电流响应进行研究，对比本征光触发下不同衬底厚度、不同光功率下器件正面与背面入光输出光电流，并对器件内部电流与电场分布状态进行对比分析，最终对厚度为50 μm的平面SiC光导开关进行了正面、背面触发实验测试。实验结果表明，40 kW峰值光功率下，与正面触发相比，背面触发器件的导通电阻减少了40%，验证了背面入光器件光电转换效率高的特点，且背面触发器件内部电场、电流更加均匀，更有利于提高器件高功率容量。结果为平面光导开关本征触发提供仿真与实验参考。Abstract: With the continuous development of photoconductive microwave technology towards high-frequency, high-power, long-life, and high-efficiency directions, lateral photoconductive devices have the potential to achieve high photoelectric gain and high main frequency response due to intrinsic light triggering and low parasitic capacitance. We investigated the photocurrent response of intrinsic light back-illuminated lateral silicon carbide (SiC) photoconductive switches. Based on semiconductor numerical simulation, the output photocurrent of the device under intrinsic light triggering with different substrate thicknesses and different light powers was compared for front and back illumination. The internal current and electric field distribution of the device were analyzed and compared. Finally, experimental tests were conducted on the front and back triggering of a 50 μm lateral SiC photoconductive switch. The experimental results show that under a 40 kW peak light power, the on-resistance of the back-triggered device is reduced by 40% compared to the front-triggered device, confirming the high photoelectric conversion efficiency of the back-illuminated device, and the internal electric field and current of the back-triggered device are more uniform, which is more conducive to improving the device’s high-power capacity. The results provide simulation and experimental references for the intrinsic triggering of planar photoconductive switches.
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图 2 不同光束宽度下光电流输出对比图
Figure 2. Comparison of photocurrent output under different beam widths
图 3 不同衬底厚度下正面与背面入光光电流幅值对比
Figure 3. Comparison of photocurrent amplitude under front and back illumination with different substrate thicknesses
图 4 10 kW峰值光功率下正面背面入光典型仿真波形与平面器件等效电路
Figure 4. Typical simulation waveforms under front and back illumination with a 10 kW peak optical power and equivalent circuit of planar devices
图 6 器件表面电流密度与电场强度对比
Figure 6. Comparison of surface current density and electric field intensity in devices
图 7 实验平台与测试器件示意图
Figure 7. Schematic diagram of the test device and the experimental platform
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