Preliminary development and high-voltage lifetime testing of vertical photoconductive semiconductor switches based on Fe-doped β-Ga2O3
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摘要: 主要围绕Fe: β-Ga2O3基垂直型光导开关的高压性能进行实验和分析。结果显示，Fe: β-Ga2O3中深能级能提供产生非本征激发的载流子，输入电压为20 kV并进行单次激光触发时器件未出现击穿趋势，在15 kV下以10 Hz光触发至少
5000 余次后开关损坏，有效数据中脉冲表现较为稳定，初步证明了氧化镓光导开关可应用于大功率和高频等极限环境。失效分析说明较大的禁带宽度不是决定高耐压的唯一条件，除了使用精确掺杂的手段引入特定缺陷来改变Ga2O3材料性能外，进一步改良现有的材料生长方式和器件封装结构等也对提高光导开关的输出和寿命有所帮助。Abstract: This study focuses on the performance of vertical photoconductive semiconductor switch (PCSS) based on Fe: β-Ga2O3 under high voltage. The results show that deep levels in Fe: β-Ga2O3 can provide carriers of non-intrinsic excitation. The device did not exhibit breakdown tendencies when subjected to a 20 kV input voltage with single-shot laser triggering. After more than5000 trigger cycles at 15 kV by a 10 Hz laser, the switch eventually failed. Nevertheless, pulse performance remained stable throughout the effective data collection period, preliminarily demonstrating the potential of Ga2O3 PCSS for applications in extreme conditions such as high power and high frequency. Failure analysis indicates that a wide bandgap is not the sole determinant of high breakdown voltage. In addition to employing precise doping techniques to introduce specific defects and modify material properties, further improvements in existing material growth methods and device packaging structures can also contribute to enhancing the output and lifetime of PCSS.-
Key words:
- β-Ga2O3 /
- deep level /
- PCSS /
- reliability /
- pulse power
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图 1 氧化镓和铜电极封装成的光导开关
Figure 1. PCSS fabricated by encapsulating gallium oxide with copper electrodes
图 4 实验一结果：单次光触发下递增输入电压的最大输出与输出脉冲展示
Figure 4. Maximum output under increasing input voltage and output pulse at 10 kV of experiment 1
图 5 实验2结果及其部分结果与实验1的对比
Figure 5. Results of experiment 2 with comparative analysis against experiment 1
图 6 实验
5180 次脉冲的最大输出与首末两次输出脉冲对比Figure 6. Maximum output of
5180 pulse and the 1st and 5,180th output pulses表 1 主要半导体材料迁移率[5]
Table 1. Carrier mobility in principal semiconductor materials
mobility(μ/cm2·V−1·s−1) Si Ge GaAs 4H-SiC GaN β-Ga2O3 diamond(C) hole 300 1900 100～ 3000 90 10 8 3800 electron 1480 3900 8400 1000 1200 300 4500 
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表 2 四个观测点的EDS结果
Table 2. EDS results at 4 spots
atom percentage/% Ga O C EDS spot1 11.05 8.88 67.20 EDS spot2 24.76 13.40 61.65 EDS spot3 44.62 16.58 38.80 EDS spot4 36.64 17.25 46.11
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