Effects of electromagnetic pulse and single event effect on electrical characteristics of SOI MOSFET
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摘要: SOI MOSFET器件广泛应用于航天电子设备中，但它们容易受到空间中电磁脉冲及粒子辐照效应的影响，进而影响航天器的稳定性。通过建立二维的短沟道SOI MOSFET器件模型，探究电磁脉冲和重离子辐照引起的单粒子效应对器件电学特性的影响。研究结果表明，在电磁脉冲作用下，随着电磁脉冲电压幅值的增大，SOI MOSFET会发生雪崩击穿，雪崩击穿现象导致PN结内建电场的电场强度和电流密度的增加，继而导致晶格温度上升；器件发生雪崩击穿的阈值电压随着栅极电压的增加而降低，同时也随着源极和漏极之间沟道长度的减小而降低。重离子入射会使SOI MOSFET器件的瞬态漏电流激增，随着电子-空穴对的复合和扩散，电流逐渐减小。电磁脉冲和重离子协同作用于器件时，重离子辐照降低了器件发生雪崩击穿的阈值电压。Abstract:
Background In space environments, electronic systems are vulnerable to various adverse effects, including electromagnetic pulses (EMP) and particle radiation, which can significantly degrade device performance and reliability. Silicon-On-Insulator (SOI) MOSFETs are widely used in aerospace applications due to their excellent electrical characteristics, but their response to combined radiation effects needs further investigation.Purpose This study aims to analyze the effects of electromagnetic pulses and heavy-ion induced single-particle events on the electrical characteristics of short-channel SOI MOSFETs. It also explores the synergistic impact when both effects occur simultaneously, providing insights for improving device robustness in harsh space conditions.Methods A two-dimensional TCAD-based numerical model of short-channel SOI MOSFETs was developed, incorporating impact ionization, carrier generation and recombination, heat transfer, and thermodynamic effects. Electromagnetic pulses were modeled as transient voltage pulses with varying amplitudes, while heavy-ion effects were simulated through charge deposition profiles characterized by LET parameters. The influence of gate voltage, channel length, and LET on device behavior was systematically studied.Results Simulation results indicate that EMP-induced voltage transients can cause avalanche breakdown in the drain PN junction, with breakdown voltage decreasing as gate bias increases or channel length shortens. The internal electric field, current density, and device temperature intensify during breakdown. Heavy-ion irradiation generates electron-hole pairs, causing transient increases in drain current, which lower the avalanche breakdown threshold when combined with EMP. Higher LET values further exacerbate device degradation by increasing ionization effects and reducing breakdown voltages. The combined effects produce more severe electrical deterioration compared to single effects.Conclusions The research demonstrates that both EMP and heavy-ion irradiation can markedly weaken the electrical stability of short-channel SOI MOSFETs. These findings underscore the importance of designing radiation-hardened devices for space applications. The study provides a theoretical basis for future investigations into the synergistic effects of radiation phenomena on power semiconductor devices.-
Key words:
- MOSFET /
- electromagnetic pulse /
- single event effect /
- avalanche breakdown /
- simulation modeling
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图 5 电磁脉冲作用下MOSFET输出特性曲线
Figure 5. Output characteristic curve of mosfet under electromagnetic pulse action
图 6 脉冲电压幅值分别为2 V、5 V和10 V时器件电场强度分布
Figure 6. Electric field distribution of the device at pulse voltage amplitudes of 2 V, 5 V, and 10 V
图 7 脉冲电压幅值分别为2 V、5 V和10 V时器件总电流密度分布
Figure 7. Total current density distribution of the device at pulse voltage amplitudes of 2 V, 5 V, and 10 V
图 8 y=0.017 μm处横轴上总电流密度分布
Figure 8. Total current density distribution on the horizontal axis at y = 0.017 μm
图 9 脉冲电压幅值分别为2 V、5 V和10 V时器件内部温度分布
Figure 9. Internal temperature distribution of the device at pulse voltage amplitudes of 2 V, 5 V, and 10 V
图 10 不同栅极电压下的输出特性曲线
Figure 10. Output characteristic curves under different gate voltages
图 11 不同沟道长度下的输出特性曲线
Figure 11. Output characteristic curves at different channel lengths
表 1 SOI MOSFET器件结构参数
Table 1. SOI MOSFET device structure parameters
structure thickness/μm material dopant type dopant concentration/cm−3 substrate 0.6 Si B 3×1015 body 0.2 Si B 3×1016 drain 0.1 Si P 1×1021 source 0.1 Si P 1×1021 buried oxide 0.3 SiO2 gate oxide layer 0.003 SiO2 gate 0.2 poly silicon 
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