Design of strong electromagnetic pulse protection circuit based on L-band
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摘要: 针对射频前端在复杂电磁环境下的电磁脉冲防护需求，设计了一款工作于L波段的强电磁脉冲防护电路。该电路以PIN二极管为核心器件，采用多级PIN二极管级联的防护结构，通过微带传输线连接每级并优化设计，仿真验证了电路在不同工作状态下的性能，并对其进行实物测试。测试结果表明，在L频段内，其插入损耗<0.6 dB，回波损耗<11.93 dB，驻波比<1.68，具有良好的信号传输性能；在4 kV方波脉冲注入下，该电路可在1 ns的时间内迅速做出响应，其产生的尖峰泄漏电压为69.636 V，经过2 ns后，电路稳定输出电压小于20 V，表明电路对快沿脉冲具有较好的瞬态防护能力。结合L波段内的低损耗特性，该电路可为工作在L波段的设备提供有效的电磁脉冲防护支持。Abstract: Aiming at the electromagnetic pulse protection requirements of RF front-end in complex electromagnetic environment, a strong electromagnetic pulse protection circuit working in L-band is designed. This circuit takes PIN diode as the core device, adopts a multi-level PIN diode cascade protection structure, connects each stage through microstrip transmission lines and optimizes the design. The performance of the circuit under different working conditions is verified by simulation, and its physical test is carried out. The test results show that in the L-band, its insertion loss is less than 0.6 dB, return loss is less than 11.93 dB, and standing wave ratio is less than 1.68. It has good signal transmission performance; Under the injection of 4 kV square wave pulse, the circuit can respond quickly within 1 ns, and the peak leakage voltage generated by the circuit is 69.636 V. After 2 ns, the stable output voltage of the circuit is less than 20 V, indicating that the circuit has good transient protection capability against fast edge pulse. Combined with the low loss characteristics in L-band, the circuit can provide effective electromagnetic pulse protection support for equipment working in L-band.
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Key words:
- RF front-end /
- Spike leakage /
- PIN diode /
- electromagnetic environment /
- Insertion loss
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图 4 尖峰泄漏与PIN管I区厚度的关系曲线
Figure 4. Relation curve between peak leakage and PIN tube I zone thickness
图 6 尖峰泄漏与脉冲上升时间的关系曲线
Figure 6. Relation curve between peak leakage and pulse rise time
图 7 尖峰泄漏与PIN二极管并联个数关系曲线
Figure 7. Relation Curve between Spike Leakage and Number of PIN Secondary Tubes in Parallel
图 9 方波注入下电路各级仿真输出结果
Figure 9. Simulation output results at all levels of the circuit under square wave injection
图 16 S参数测试结果与仿真结果对比
Figure 16. Comparison between S parameter test results and simulation results
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