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基于自动化试验系统的低噪声放大器高功率微波脉冲损伤阈值研究

郭濠逸 蔡宗棋 黄淇锋 方文啸

郭濠逸, 蔡宗棋, 黄淇锋, 等. 基于自动化试验系统的低噪声放大器高功率微波脉冲损伤阈值研究[J]. 强激光与粒子束. doi: 10.11884/HPLPB202537.250073
引用本文: 郭濠逸, 蔡宗棋, 黄淇锋, 等. 基于自动化试验系统的低噪声放大器高功率微波脉冲损伤阈值研究[J]. 强激光与粒子束. doi: 10.11884/HPLPB202537.250073
Guo Haoyi, Cai Zongqi, Huang Qifeng, et al. Research on high power microwave pulse damage threshold of low-noise amplifiers based on automated testing system[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.250073
Citation: Guo Haoyi, Cai Zongqi, Huang Qifeng, et al. Research on high power microwave pulse damage threshold of low-noise amplifiers based on automated testing system[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202537.250073

基于自动化试验系统的低噪声放大器高功率微波脉冲损伤阈值研究

doi: 10.11884/HPLPB202537.250073
基金项目: 科工局稳定支持项目(JBS252800270);工业和信息化部电子第五研究所发展基金重点项目(23Z01)
详细信息
    作者简介:

    郭濠逸,guohy53@mail2.sysu.edu.cn

    通讯作者:

    蔡宗棋,zqcai.uestc@hotmail.com

  • 中图分类号: F407.67;TN306

Research on high power microwave pulse damage threshold of low-noise amplifiers based on automated testing system

  • 摘要: 高功率微波试验是研究半导体器件在强电磁环境下损伤效应的重要手段。然而,传统试验方法主要依赖人工操作,难以精准测定器件的失效阈值,影响实验的重复性和可靠性。为提升测试精度并减少人为误差,基于半导体器件与高功率微波相互作用机制,设计了一套高功率微波脉冲自动化试验系统及标准化试验流程。以典型商用低噪声放大器为研究对象,系统评估其在高功率微波脉冲作用下的损伤阈值。通过同步测量器件的时域响应、频域特性及电流变化,并结合失效前后的参数对比分析,精确确定器件的失效阈值点。进一步地针对失效器件的一次、二次及三次损伤过程进行系统评估,并结合微观物理机制探讨损伤累积效应对器件关键参数的影响,以揭示失效机理。
  • 图  1  高功率微波时域和频域波形示意图

    Figure  1.  The schematic of time-domain and frequency-domain waveforms of HPM

    图  2  高功率微波试验平台示意图

    Figure  2.  Schematic diagram of the HPM measurement platform

    图  3  高功率微波自动化实验模式

    Figure  3.  HPM Operation mode

    图  4  试验样品示意图

    Figure  4.  DUT schematic diagram

    图  5  受试器件的非线性特性

    Figure  5.  The nonlinear characteristics of the Device Under Test

    图  6  工作电流随脉冲个数变化曲线

    Figure  6.  The curve of current variation with the number of pulses

    图  7  器件失效前后输入输出波形变化

    Figure  7.  Input and output waveforms before and after the DUT failure

    图  8  500 MHz下S参数随脉冲个数变化曲线

    Figure  8.  S-parameter variation curve with pulse count at 500 MHz

    图  9  低噪声放大器的失效阈值曲线

    Figure  9.  Failure threshold curve of the low-noise amplifier (LNA)

    图  10  完好样品的版图照片及引脚分布

    Figure  10.  The layout photo of the intact sample and its pin distribution

    图  11  失效电路的版图

    Figure  11.  The layout of the failed circuit

    表  1  器件的第一次失效的阈值点

    Table  1.   The threshold point of the device's first failure

    pulse width/ms duty cycle inject power/dBm pulse number ΔI/mA ΔS21/dB
    4 50% 34.44 560 4.69 29.30
    4 50% 34.67 220 4.60 29.23
    4 50% 34.86 125 4.67 29.89
    4 50% 35.55 38 4.76 30.34
    4 $\ll $ 1 37.07 2947 4.64 34.70
    4 $\ll $ 1 37.21 50 4.63 33.94
    4 $\ll $ 1 37.43 1 4.50 35.59
    20 50% 34.2 120 4.73 29.99
    20 50% 34.35 45 4.68 29.37
    20 50% 34.66 21 4.70 29.71
    20 50% 34.99 9 4.70 29.39
    20 $ \ll $ 1 35.72 1930 4.66 34.60
    20 $\ll $ 1 35.87 12 4.74 37.19
    20 $\ll $ 1 36.25 1 4.59 37.47
    下载: 导出CSV

    表  2  失效器件与正常器件各引脚间的阻性差异特征

    Table  2.   Resistance difference characteristics between the normal and failed devices across various pins

    current/mARFIN-VCC/ΩRFOUT-VCC/ΩRFIN-GND1/ΩRFOUT-GND1/ΩRFIN-GND2/ΩRFOUT-GND2/Ω
    21750125684.8394.74895312.5
    26337.21253.42394.74227.8312.5
    161.882125734.4394.74934.3312.5
    402.66512513.54394.74229.6312.5
    下载: 导出CSV
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出版历程
  • 收稿日期:  2025-04-14
  • 修回日期:  2025-07-02
  • 录用日期:  2025-06-26
  • 网络出版日期:  2025-07-08

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