Research on high power microwave pulse damage threshold of low-noise amplifiers based on automated testing system
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摘要: 高功率微波试验是研究半导体器件在强电磁环境下损伤效应的重要手段。然而，传统试验方法主要依赖人工操作，难以精准测定器件的失效阈值，影响实验的重复性和可靠性。为提升测试精度并减少人为误差，基于半导体器件与高功率微波相互作用机制，设计了一套高功率微波脉冲自动化试验系统及标准化试验流程。以典型商用低噪声放大器为研究对象，系统评估其在高功率微波脉冲作用下的损伤阈值。通过同步测量器件的时域响应、频域特性及电流变化，并结合失效前后的参数对比分析，精确确定器件的失效阈值点。进一步地针对失效器件的一次、二次及三次损伤过程进行系统评估，并结合微观物理机制探讨损伤累积效应对器件关键参数的影响，以揭示失效机理。Abstract: High power microwave (HPM) testing is a critical method for investigating the damage effects of semiconductor devices in strong electromagnetic environments. However, traditional testing methods rely primarily on manual operation, making it difficult to accurately determine device failure thresholds and affecting the repeatability and reliability of experiments. To enhance testing accuracy and reduce human error, this study designs an automated HPM pulse testing system and standardized testing procedure based on the damage mechanisms of semiconductor devices. A typical commercial low-noise amplifier (LNA) is selected as the research subject, and its damage threshold under HPM pulses is systematically evaluated. By synchronously measuring the device's time-domain response, frequency characteristics, and current variations, and comparing parameters before and after failure, the failure threshold is precisely identified. Furthermore, a systematic assessment of primary, secondary, and tertiary damage stages of the failed device is conducted, with an analysis of the cumulative damage effects on key device parameters based on microscopic physical mechanisms to reveal the failure mechanisms. The proposed system and evaluation method can be applied to the reliability assessment of semiconductor devices in HPM environments, providing experimental support for device robustness analysis and optimization.
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图 1 高功率微波时域和频域波形示意图
Figure 1. The schematic of time-domain and frequency-domain waveforms of HPM
图 7 器件失效前后输入输出波形变化
Figure 7. Input and output waveforms before and after the DUT failure
图 8 500 MHz下S参数随脉冲个数变化曲线
Figure 8. S-parameter variation curve with pulse count at 500 MHz
图 10 完好样品的版图照片及引脚分布
Figure 10. The layout photo of the intact sample and its pin distribution
表 1 器件的第一次失效的阈值点
Table 1. The threshold point of the device's first failure
pulse width/ms duty cycle inject power/dBm pulse number ΔI/mA ΔS21/dB 4 50% 34.44 560 4.69 29.30 4 50% 34.67 220 4.60 29.23 4 50% 34.86 125 4.67 29.89 4 50% 35.55 38 4.76 30.34 4 $\ll $ 1 37.07 2947 4.64 34.70 4 $\ll $ 1 37.21 50 4.63 33.94 4 $\ll $ 1 37.43 1 4.50 35.59 20 50% 34.2 120 4.73 29.99 20 50% 34.35 45 4.68 29.37 20 50% 34.66 21 4.70 29.71 20 50% 34.99 9 4.70 29.39 20 $ \ll $ 1 35.72 1930 4.66 34.60 20 $\ll $ 1 35.87 12 4.74 37.19 20 $\ll $ 1 36.25 1 4.59 37.47 
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表 2 失效器件与正常器件各引脚间的阻性差异特征
Table 2. Resistance difference characteristics between the normal and failed devices across various pins
current/mA RFIN-VCC/Ω RFOUT-VCC/Ω RFIN-GND1/Ω RFOUT-GND1/Ω RFIN-GND2/Ω RFOUT-GND2/Ω 21 750 125 684.8 394.74 895 312.5 26 337.2 125 3.42 394.74 227.8 312.5 16 1.882 125 734.4 394.74 934.3 312.5 40 2.665 125 13.54 394.74 229.6 312.5
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