基于PIN二极管的兆瓦级快速倒相开关设计

陈良萍; 殷勇; 江涛; 秦雨; 李海龙; 王彬; 毕亮杰; 熊正锋; 蒙林

doi:10.11884/HPLPB202537.250097

基于PIN二极管的兆瓦级快速倒相开关设计

doi: 10.11884/HPLPB202537.250097

1.
电子科技大学电子科学与工程学院，成都 610054
2.
西北核技术研究所，西安 710024

基金项目: 国家自然科学基金项目(62271113、62401125); 四川省自然科学基金项目(2023NSFSC1376); 中央高校基础研究基金项目(ZYGX2024J008)

详细信息

作者简介:
陈良萍，clp@std.uestc.edu.cn

中图分类号: TN623
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- 被引次数: 0
出版历程
- 收稿日期: 2025-04-15
- 修回日期: 2025-07-17
- 录用日期: 2025-06-30
- 网络出版日期: 2025-07-23

Design of a megawatt-level fast bi-phase modulator based on PIN diodes

1.
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
2.
Northwest Institute of Nuclear Technology, Xi’an 710024, China

摘要

摘要: 为研究基于磁控管等电真空振荡器的低成本、小型化、稳定且可阵列化应用的SLAC能量倍增器（SLED），设计了一种功率容量兆瓦级、响应时间纳秒级的高功率快速倒相开关。在波导结构中插入传统PIN二极管加载线型移相电路单元，通过波导外置偏置电路控制PIN二极管的“开”/“关”状态，改变移相电路的等效阻抗以控制波导传输微波相位。已通过高功率实验验证了此类二极管波导移相器的高功率特性。通过级联8个移相电路单元实现180°相移。对所设计的倒相开关进行了频域与时域参数测试：频域测试结果表明，该倒相开关在工作频率下的插损小于0.7 dB，在中心频率2.458 GHz处相移172°，相移量与仿真设计值相比误差在±4°以内；时域测试结果表明，该倒相开关的倒相时间约为5 ns。
- 能量倍增器 /
- 脉冲压缩器 /
- 倒相开关 /
- PIN二极管
Abstract: Background
High power microwave (HPM) pulse technology has developed rapidly due to its applications in particle accelerators, radar, communications, directed energy, plasma physics, and other fields. Pulse compression technology provides an effective method for enhancing the peak power of microwave pulses.
Purpose
In order to study a low-cost, miniaturized, stable, and arrayable SLAC Energy Doubler (SLED) based on vacuum electronic oscillators such as magnetrons, a high power fast bi-phase modulator with megawatt-level capacity and nanosecond response time has been designed.
Methods
Insert a conventional PIN diode loaded-line type phase-shifting circuit into the waveguide structure, and the equivalent impedance of the phase-shifting circuit changes by switching the “on” and “off” states of the PIN diodes through the waveguide external bias circuit, then the waveguide transmission microwave phase changes. The high-power characteristics of such PIN diode waveguide phase shifters have been verified by high-power experiments.
Results
In this paper, a 180° phase shift is realized by cascading 8 phase-shifting circuit cells. The frequency-domain and time-domain parameters of the designed bi-phase modulator are tested. The frequency-domain test results show that the insertion loss of the bi-phase modulator is less than 0.7 dB, and the phase shift is 172° at the center frequency of 2.458 GHz. The error of the phase shift is within ±4° compared with that of the design value in simulation. The time-domain test results show that the inversion time of the bi-phase modulator is about 5 ns.
Conclusions
Compared with traditional semiconductor phase shifters, this bi-phase modulator can achieve the same phase-reversal speed while withstanding high power capacities, making it extremely valuable in the HPM field.
- energy doubler /
- pulse compressor /
- bi-phase modulator /
- PIN diode

HTML全文

图 1 倒相开关结构及其倒相原理示意图

Figure 1. Schematic diagram of the bi-phase modulator structure and its phase inverting principle

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图 2 倒相开关S参数测试系统

Figure 2. S-parameter test system for the bi-phase modulator

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图 3 倒相开关“开”/“关”两种状态下的实验测试S参数与仿真计算S参数对比

Figure 3. Comparison of experimental S-parameters and simulated S-parameters for on/off states of the bi-phase modulator

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图 4 倒相开关实验测试相移量与仿真计算相移量的对比及相位误差

Figure 4. Comparison of experimental and simulated phase shifts of the bi-phase modulator and the phase error

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图 5 影响倒相开关性能的主要因素分析

Figure 5. Analysis of the main factors affecting the performance of the bi-phase modulator

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图 6 二极管焊接状态改善前后对比

Figure 6. Comparison of diode soldering conditions before and after improvement

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图 7 改善二极管焊接前后的测试结果与仿真结果对比

Figure 7. Comparison of test and simulation results before and after improved diode soldering

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图 8 倒相开关的时域测试系统和二极管偏置电压脉冲与倒相开关传输的微波脉冲同步效果

Figure 8. Time-domain test system for the bi-phase modulator and synchronization of diode bias voltage pulses with microwave pulses transmitted in the bi-phase modulator

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图 9 倒相开关的时域测试结果

Figure 9. Time-domain test result of the bi-phase modulator

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图 10 “开”/“关”状态下倒相开关的输入信号和输出信号的时域测试结果对比

Figure 10. Comparison of time-domain test results of input signal and output signal of the bi-phase modulator in on/off states

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表 1 工作频率2.458 GHz处的实测及仿真参数

Table 1. Measured and simulated parameters at 2.458 GHz operating frequency

	S_F11/dB	S_F21/dB	S_R11/dB	S_R21/dB	φ/(°)
simulated	−28.98	−0.43	−40.76	−0.31	169.38
experimental	−17.53	−0.62	−12.59	−0.68	171.57
error	11.45	0.19	28.17	0.37	2.19

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表 2 设计的倒相开关与文献中移相器的性能参数对比

Table 2. Comparison of the performance parameters of the bi-phase modulator designed with the phase shifters (PS) in the literature

works	PS type	power capacity	response time	insertion loss
Ref. [29]	waveguide PS	450 MW in vacuum	30 ms	＜ 0.4 dB
Ref. [30]	reflective-type PS	5 W	N/A	2 dB
Ref. [22]	reflection type bi-PS	N/A	4 ns	N/A
this work	PIN diode waveguide PS	＞1 MW	5 ns	＜ 0.7 dB

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