实现射线-光转换探测的氮化镓基半导体器件研究

王方宝; 周磊簜; 张斯龙; 卢星; 王建峰; 赵乃哲; 张囡; 陈亮; 欧阳晓平

doi:10.11884/HPLPB202537.250196

实现射线-光转换探测的氮化镓基半导体器件研究

doi: 10.11884/HPLPB202537.250196

1.
西北核技术研究所，西安 710024
2.
西安交通大学微电子学院，西安 710049
3.
湘潭大学材料科学与工程学院，湖南湘潭 411100
4.
中山大学电子信息工程学院，广州 510275
5.
中国科学院苏州纳米技术与纳米仿生研究所，江苏苏州 215123

详细信息

作者简介:
王方宝，wangfangbao@nint.ac.cn

通讯作者:
陈　亮，chenliang@nint.ac.cn。

中图分类号: TL81；TM23
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- 文章访问数: 110
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- 被引次数: 0
出版历程
- 收稿日期: 2025-07-03
- 修回日期: 2025-09-14
- 录用日期: 2025-09-14
- 网络出版日期: 2025-09-19
- 刊出日期: 2025-10-15

Study on GaN-based semiconductor devices for radiation-optical conversion detection

1.
Northwest Institute of Nuclear Technology, Xi'an 710024, China
2.
School of Microelectronics, Xi’an Jiaotong University, Xi’an 710049, China
3.
School of Materials Science and Engineering, Xiangtan University, Xiangtan 411100, China
4.
School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
5.
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China)

摘要

摘要: 氮化镓（GaN）材料具有优异的光电性能，可以兼顾半导体和闪烁体的工作模式，在辐射探测领域有广泛的应用潜力。制备了一种由高阻氮化镓衬底层和同质外延多量子阱层串联组合的转换器件，实现了高能辐射在高阻衬底部分激发的载流子通过电场输运至多量子阱实现复合发光。实验表明，器件在工作模式下具有低的暗电流和对X射线灵敏的电学响应。在电场作用下，器件中多量子阱结构发光峰位于410 nm。发光强度随X射线剂量变化有明显提升。通过采集器件发光图像的方法直观验证了器件实现辐射到光信号的转换功能。
- GaN多量子阱 /
- 辐射-光转换 /
- 辐射测量 /
- 半导体探测器 /
- 闪烁体
Abstract: Background
Gallium nitride (GaN) exhibits exceptional optoelectronic properties, making it highly suitable for applications in high-power devices, light-emitting diodes (LEDs), high-electron-mobility transistors (HEMTs), and radiation detectors. Particularly in radiation detection, GaN can function as both a semiconductor and a scintillator. As a scintillator material, it demonstrates high luminescence efficiency. However, the yellow luminescence band induced by defects in the material often leads to slow time response, limiting its broader application. On the other hand, GaN-based LEDs with multi-quantum well (MQW) structures can achieve excellent electroluminescence performance. Nevertheless, MQW-enhanced scintillators generally suffer from drawbacks such as a thin sensitive layer and low energy deposition efficiency.
Purpose
To leverage the advantageous properties of GaN comprehensively and achieve higher overall performance in detection, this study proposes a radiation-to-optical conversion detection mode that combines GaN semiconductor devices for simultaneous radiation energy deposition and carrier recombination luminescence. By constructing a PN junction structure incorporating MQWs on a high-resistivity, high-mobility GaN substrate, a radiation detection device capable of both radiation-to-carrier conversion and carrier recombination luminescence is realized.
Methods
A 400 μm-thick unintentionally doped high-resistivity GaN single crystal was used as the radiation energy deposition layer. A PN junction structure with MQWs was epitaxially grown on the high-resistivity GaN substrate via metal-organic chemical vapor deposition (MOCVD). The epitaxial layer was segmented into independent regions using inductively coupled plasma (ICP) etching. Transparent indium tin oxide (ITO) electrodes were subsequently fabricated via magnetron sputtering, followed by the deposition of metal electrodes on both the top and bottom surfaces of the device.
Results
The device exhibited low dark current and sensitive X-ray response characteristics. A multi-quantum well recombination structure with a luminescence peak at 410 nm was incorporated into the device. Luminescence spectrum tests and imaging analysis confirmed the device’s response to varying radiation doses and changes in luminescence efficiency under different applied voltages.
Conclusions
The designed device enables directional drift and recombination luminescence of carriers generated by radiation energy deposition under an applied electric field. By leveraging semiconductor device design and electric-field-regulated carrier behavior, the luminescence efficiency, response time, and emission spectrum of the device can be effectively modulated. This approach offers a novel technical pathway for radiation detection.
- GaN multi-quantumwell /
- radiation-photon conversion /
- radiation measurement /
- semiconductor detector /
- scintillator

HTML全文

图 1 射线-光转换原理示意图

Figure 1. Schematic diagram of radiation-optical conversion principle

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图 2 GaN基射线-光转换器件结构示意图

Figure 2. Schematic diagram of GaN-based radiation-optical conversion device

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图 3 多量子阱结构扫描电镜照片及EDS面扫图像

Figure 3. Scanning electron micrograph of multi-quantum well structure and EDS surface scanning image

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图 4 器件的暗电流I-V曲线和X射线响应曲线

Figure 4. Dark current I-V curve and X-ray response curve of the device

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图 5 器件在激光、X射线及电场作用下的发光光谱

Figure 5. Photoluminescence spectra of devices under the action of laser, X-ray and electric field

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图 6 器件的发光图像

Figure 6. Light-emitting image of device

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图 7 器件发光区域的灰度线性分布曲线和发光图像灰度随电压变化趋势

Figure 7. Linear distribution curve of grayscale in the light-emitting region of the device and the variation trend of grayscale with voltage in the light-emitting image

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