Effect of area on X-ray response characteristics of vertical NPN detectors
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摘要: 设计并制造了三种不同面积的双端SiC基NPN结构辐射探测器，并对其直流X射线响应特性进行了实验评估。实验结果表明，这些探测器在外加偏置电压和光伏电压的共同作用下工作，并存在四个拐点电压，将I-V特性曲线分为五个阶段。相比之下，在相同的直流X射线照射条件下，面积较大的探测器能够吸收更多X射线能量，从而产生更强的输出信号。面积较小的探测器在I-V特性曲线上显示出更高的拐点电压，表现出更强的耐压能力。此外，探测器的响应时间与其面积大小密切相关，面积越大，开关下降时间越长，1 cm×1 cm探测器比0.25 cm×0.25 cm探测器的90%～10%下降时间要多约12.2 ms。这些发现强调了在辐射探测器设计中考虑面积的重要性，并指出了优化这一参数以提高探测器性能的必要性。Abstract:
Background A new NPN structure detector based on SiC with internal gain characteristics was designed successfully.Purpose This study aims to analysis the effect of area on the NPN detectors.Methods This research involves the design and fabrication of three dual-end SiC-based NPN structure radiation detectors with different areas. Their DC X-ray response characteristics were experimentally evaluated.Results The results demonstrate that these detectors operate under the combined effects of externally-biased voltage and photovoltaic voltage, exhibiting four distinct knee points that divide the I-V characteristic curve into five stages. Under identical DC X-ray irradiation conditions, larger area detectors absorb more X-ray energy, leading to stronger output signals. Smaller area detectors show higher knee points on the I-V characteristic curve, indicating a greater ability to withstand the voltage. Additionally, the response time of the detectors is closely related to their size, with larger areas resulting in longer switch-off times.The 90%-10% fall time of the 1 cm×1 cm detector is approximately 12.2 ms longer than that of the 0.25 cm ×0.25 cm detector.Conclusions These findings emphasize the importance of considering area in the design of radiation detectors and highlight the need to optimize this parameter to enhance the detector performance. -
图 3 不同灵敏面积探测器的暗电流随偏置电压的变化曲线
Figure 3. Variation curves of dark current with bias voltage for detectors of different areas
图 4 不同管电流下0.5cm×0.5cm探测器直流X射线响应I-V曲线
Figure 4. I-Vcurves of DC X-ray response for a 0.5 cm×0.5cm detector under different tube currents
图 5 无光照时不同偏压下探测器的电势、能带和电场变化
Figure 5. Potential，energy band，and electric field variations in the detector under different biases without illumination
图 6 无光照和有光照下能带和电场的对照
Figure 6. comparisons of energy bands and electric fields without and with illuminations
图 7 不同面积探测器直流X射线响应I-V曲线比照
Figure 7. Comparison of I-V Curves of DC X-ray Response for Detectors with Different Areas
图 8 输出电流随X射线源管电流的变化曲线
Figure 8. Variation curve of output current with the tube current of X-ray source
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