中子衍射技术在半导体材料与器件研究中的应用

王宇婷; 陈梦奇; 巨新

doi:10.11884/HPLPB202537.250212

中子衍射技术在半导体材料与器件研究中的应用

doi: 10.11884/HPLPB202537.250212

北京科技大学物理系，北京 100083

基金项目: 国家自然科学基金项目（62201031）；北京科技大学青年教师跨学科研究项目（中央高校基本科研业务费专项资金项目）（FRF-IDRY-GD24-002）

详细信息

作者简介:
王宇婷，yutingwang@ustb.edu.cn

通讯作者:
巨　新，jux@ustb.edu.cn。

中图分类号: O571.53
计量
- 文章访问数: 35
- HTML全文浏览量: 13
- PDF下载量: 2
- 被引次数: 0
出版历程
- 收稿日期: 2025-07-15
- 修回日期: 2025-09-01
- 录用日期: 2025-08-29
- 网络出版日期: 2025-09-11

Applications of neutron diffraction in semiconductor materials and devices research

Department of Physics, University of Science and Technology Beijing, Beijing 100083, China

摘要

摘要: 中子衍射技术凭借其穿透能力、轻元素敏感性和动态探测优势，成为半导体材料研究的重要表征手段。该技术通过分析衍射峰特征，揭示材料的晶格畸变、应变分布和缺陷演化规律，为理解材料性能提供原子尺度依据。它能定量分析位错密度和阳离子占位等缺陷，并研究磁有序结构和自旋相互作用机制，支撑新型电子器件开发。其原位测试能力可实时观测相变过程中的缺陷重组动态，揭示外场作用下的结构响应机制，尤其在极端环境材料研究中克服了传统方法的局限。当前研究重点转向建立微观结构与宏观性能的关联模型，发展原位动态测试方法以精准预测材料行为。随着大型科学装置的升级，该技术将在半导体材料的基础研究和工程应用中发挥更大作用，特别是在苛刻环境材料开发领域前景广阔。未来发展方向将聚焦多尺度表征能力提升和原位实验方法创新，为半导体材料科学进步提供有力支撑。
- 辐照损伤 /
- 中子衍射 /
- 半导体器件 /
- 微观结构 /
- 极端条件
Abstract: Neutron diffraction technology has become a vital characterization tool in semiconductor material research due to its penetration capability, sensitivity to light elements, and dynamic detection advantages. By analyzing diffraction peak characteristics, this technique reveals lattice distortions, strain distributions, and defect evolution patterns, providing atomic-scale insights into material properties. It enables quantitative analysis of defects such as dislocation density and cation occupancy while investigating magnetic ordering and spin interaction mechanisms, supporting the development of novel electronic devices. Its in-situ testing capability allows real-time observation of defect reorganization during phase transitions and structural responses under external fields, overcoming the limitations of conventional methods, particularly in extreme-environment material studies. Current research focuses on establishing correlations between microstructural evolution and macroscopic performance, advancing in-situ dynamic testing methods for precise material behavior prediction. With upgrades to large-scale scientific facilities, neutron diffraction will play an increasingly significant role in both fundamental research and engineering applications of semiconductor materials, especially in harsh-environment material development. Future advancements will prioritize enhancing multiscale characterization capabilities and innovating in-situ experimental approaches, providing robust technical support for semiconductor materials science.
- radiation damage /
- neutron diffraction /
- semiconductor devices /
- microstructure /
- extreme conditions

HTML全文

图 1 在室温和453 K下进行压缩测试前后的轴向和径向衍射图谱^[11]

Figure 1. The axial and radial diffraction patterns before and after compression tests at room temperature and 453 K respectively^[11]

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图 2 体相Ag₂S在室温和453 K下沿轴向变形时的纹理演变(标尺经过归一化处理，但在不同的晶体结构中有所不同^[11])

Figure 2. Texture evolution of bulk Ag₂S during axial deformation at room temperature and 453 K (The scale bars are normalized but vary across different crystal structures^[11])

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图 3 Mn_2-xFe_xO₃样品的室温中子衍射图及Rietveld精修得到的晶体结构^[23]

Figure 3. Room-temperature neutron diffraction patterns of Mn_2-xFe_xO₃ samples and crystal structure obtained from Rietveld refinement^[23]

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图 4 沿[001]晶轴方向施加磁场H的条件下，与铁磁相（上图）、AF I相及AF II相（下图）波矢相关的磁衍射峰强度，测量温度范围为1.5～1.8 K。插图显示了零场条件下(－$ \dfrac{1}{2} $,$ \dfrac{1}{2} $,$ \dfrac{1}{2} $)峰强度随温度的变化^[24]

Figure 4. Under an applied magnetic field H along the [001] crystallographic axis, the intensities of magnetic diffraction peaks associated with the wave vectors of the ferromagnetic phase (upper panel), AF I phase and AF II phase (lower panel) were measured in the temperature range of 1.5～1.8 K. The inset shows the temperature dependence of the (−1/2,1/2,1/2) peak intensity under zero-field conditions^[24]

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