A study of clock generator PLL circuit under total ionizing dose effects in consideration of energy deposition fluctuation
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摘要: 考虑晶体管能量沉积涨落，采用蒙卡抽样方法随机修改晶体管SPICE网表敏感参数，等效开展典型0.18 μm工艺锁相环电路（PLL）总剂量辐射效应研究，给出0～200 krad (SiO2)不同总剂量环境参数下锁相环电路的输出频率f、相位差δ和压控电压Vco_in的变化，并初步对PLL总剂量辐射效应敏感模块进行了甄别。研究结果表明，在不考虑晶体管能量沉积涨落情形下，总剂量辐射效应会导致PLL电路的δ和f发生不同程度的波动，但最终可通过环路反馈机制恢复正常，保持PLL电路锁相功能；相反，在考虑晶体管能量沉积涨落情形，PLL电路锁相后呈现出非预期频率的响应输出，可能导致通信过程的数据丢失以及处理器功能的扰动，对电路整体行为产生灾难性影响。如随着总剂量的增加，PLL电路输出频率分布离散性增大，在30和200 krad(SiO2)时，f的标准方差分别为83 kHz和217 kHz，相差近3倍。进一步，通过监测PLL电路各个模块的总剂量辐射效应响应，初步发现电荷泵模块对总剂量辐射效应较为敏感。本文相关研究方法、结果可为考量或评估真实条件下的PLL电路总剂量辐射效应研究提供参考，并进一步对PLL电路的抗总剂量辐射效应设计提供建议。Abstract:
Background Phase-locked loops (PLL) circuit plays a significant role in microprocessor clock circuits and high-speed interface circuits. Conducting research on the strong radiation effect of PLL circuits could provide basic data for evaluating their overall damage response.Purpose In consideration of transistors’energy deposition fluctuation to be more close to practical radiation, the total ionizing dose (TID) effect of a typical 0.18 μm process phase-locked loops circuit (PLL) was equivalently studied, which could make up for the deficiencies of previous related research.Methods Employing with Monte Carlo sampling method to modify the sensitive parameters of the transistor SPICE model, the TID effect of PLL circuit was studied, where the statistical distributions of output frequency f, phase difference δ, and control voltage Vvco_in under different TID ranging from 0 to 200 krad (SiO2) are given.Results Results demonstrate that the values of f and δ would be changed in various degrees under TID effect without considering the energy deposition fluctuations, and it could eventually return to normal through the circuit’s feedback mechanism. On the contrary, when considering the energy deposition fluctuations, the PLL circuit shows an unexpected frequency response after phase locking, which may lead to data loss during the communication process and disturbances to the processor’s functionality, leading to a disaster’s impact on the overall behavior of the circuit.Conclusions The simulation methods and results in this paper could provide references for considering or evaluating TID effect of PLL circuits under real conditions, and further offer suggestions on the design of anti TID effect of PLL circuits.-
Key words:
- energy deposition fluctuations /
- total ionizing dose /
- phase-locked loops /
- SPICE netlist /
- Monte Carlo
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图 2 典型PLL电路常态输出结果
Figure 2. Simulation results of the typical PLL circuit output under non-irradiated conditions
图 3 典型PLL电路总剂量辐射效应仿真计算流程
Figure 3. Simulation and calculation flow of TID effect of typical PLL circuit
图 4 NMOS/PMOS器件3维模型构建及验证
Figure 4. Construction and verification of 3D model of NMOS/ PMOS devices
图 5 NMOS/PMOS器件转移特性曲线总剂量辐射效应仿真
Figure 5. Simulation of TID effect of transfer characteristic curve on NMOS/ PMOS device
图 6 典型PLL电路在不同TID下的输出频率、相位差和VCO控制电压的结果
Figure 6. Output frequency, phase difference and VCO control voltage results of typical PLL circuit under 100 and 200 krad (SiO2)
图 7 考虑TID能量沉积涨落情形下典型PLL电路输出f和Vvco_in仿真结果
Figure 7. Simulation results of typical PLL circuit output under different TIDs in consideration of energy deposition fluctuation
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[1] Kaura V, Blasko V. Operation of a phase locked loop system under distorted utility conditions[J]. IEEE Transactions on Industry Applications, 1997, 33(1): 58-63. doi: 10.1109/28.567077 [2] Mestice M, Ciarpi G, Rossi D, et al. An integrated charge pump for phase-locked loop applications in harsh environments[J]. Electronics, 2024, 13: 744. doi: 10.3390/electronics13040744 [3] Maffezzoni P, Levantino S. Analysis of VCO phase noise in charge-pump phase-locked loops[J]. IEEE Transactions on Circuits and Systems I: Regular Papers, 2012, 59(10): 2165-2175. doi: 10.1109/TCSI.2012.2185312 [4] Lee J S, Keel M S, Lim S I, et al. Charge pump with perfect current matching characteristics in phase-locked loops[J]. Electronics Letters, 2000, 36(23): 1907-1908. doi: 10.1049/el:20001358 [5] 方盛, 秦希, 蒋俊, 等. 一种快速捕获带宽可调的锁相环电路[J]. 固体电子学研究与进展, 2009, 29(4): 556-560,565 doi: 10.3969/j.issn.1000-3819.2009.04.017Fang Sheng, Qin Xi, Jiang Jun, et al. A fast acquisition PLL with tunable loop bandwidth[J]. Research & Progress of Solid State Electronics, 2009, 29(4): 556-560,565 doi: 10.3969/j.issn.1000-3819.2009.04.017 [6] 庞浩, 俎云霄, 王赞基. 一种新型的全数字锁相环[J]. 中国电机工程学报, 2003, 23(2): 37-41,131 doi: 10.3321/j.issn:0258-8013.2003.02.008Pang Hao, Zu Yunxiao, Wang Zanji. A new design of all digital phase-locked loop[J]. Proceedings of the CSEE, 2003, 23(2): 37-41,131 doi: 10.3321/j.issn:0258-8013.2003.02.008 [7] Santos Filho R M, Seixas P F, Cortizo P C, et al. Comparison of three single-phase PLL algorithms for UPS applications[J]. IEEE Transactions on Industrial Electronics, 2008, 55(8): 2923-2932. doi: 10.1109/TIE.2008.924205 [8] 沈国红, 张珅毅, 王春琴, 等. HXMT轨道空间辐射环境分析[J]. 现代应用物理, 2023, 14: 010606 doi: 10.12061/j.issn.2095-6223.2023.010606Shen Guohong, Zhang Shenyi, Wang Chunqin, et al. Analysis of space radiation exploration on hard X-ray modulation telescope[J]. Modern Applied Physics, 2023, 14: 010606 doi: 10.12061/j.issn.2095-6223.2023.010606 [9] 王建国, 牛胜利, 张殿辉, 等. 高空核爆炸效应参数手册[M]. 北京: 原子能出版社, 2010Wang Jianguo, Niu Shengli, Zhang Dianhui, et al. The parameter manual book of high-altitude nuclear explosion effects[M]. Beijing: Atomic Energy Press, 2010 [10] 王建国, 刘利, 牛胜利, 等. 高空核爆炸环境数值模拟[J]. 现代应用物理, 2023, 14: 010101 doi: 10.12061/j.issn.2095-6223.2023.010101Wang Jianguo, Liu Li, Niu Shengli, et al. Numerical simulations of environmental parameters of high-altitude nuclear explosion[J]. Modern Applied Physics, 2023, 14: 010101 doi: 10.12061/j.issn.2095-6223.2023.010101 [11] 朱金辉, 左应红, 刘利, 等. 蒙特卡罗方法在核爆辐射环境模拟中的应用与发展[J]. 现代应用物理, 2023, 14: 030104Zhu Jinhui, Zuo Yinghong, Liu Li, et al. Application and development of Monte Carlo method in simulation of nuclear explosion radiation environments[J]. Modern Applied Physics, 2023, 14: 030104 [12] 乔登江. 核爆炸物理概论[M]. 北京: 原子能出版社, 1982Qiao Dengjiang. General principles to the physics of nuclear burst[M]. Beijing: Atomic Energy Press, 1982 [13] 秦军瑞, 陈吉华, 赵振宇, 等. 锁相环电路中压控振荡器的SET响应研究[J]. 计算机工程与科学, 2011, 33(2): 75-79 doi: 10.3969/j.issn.1007-130X.2011.02.015Qin Junrui, Chen Jihua, Zhao Zhenyu, et al. Research on single-event transients in voltage-controlled oscillators of phase-locked loops[J]. Computer Engineering and Science, 2011, 33(2): 75-79 doi: 10.3969/j.issn.1007-130X.2011.02.015 [14] Ahirwar R, Pattanaik M, Srivastava P. Radiation hardened by design-based voltage controlled oscillator for low power phase locked loop application[J]. Journal of Electronic Testing, 2024, 40(2): 171-184. doi: 10.1007/s10836-024-06113-x [15] Fu Yanjun, Peng Zhigang, Dong Zhiyong, et al. A study on the timing sensitivity of the transient dose rate effect on complementary metal-oxide-semiconductor image sensor readout circuits[J]. Sensors, 2024, 24: 7659. doi: 10.3390/s24237659 [16] 伏琰军, 韦源, 左应红, 等. 典型ADC电路中斜坡发生器瞬时剂量率效应时序敏感性分析[J]. 现代应用物理, 2024, 15: 060601Fu Yanjun, Wei Yuan, Zuo Yinghong, et al. Timing sensitivity of ramp generator of typical ADC circuit radiated by transient dose rate[J]. Modern Applied Physics, 2024, 15: 060601 [17] 伏琰军, 韦源, 左应红, 等. 典型相关双采样电路瞬时剂量率辐射效应时序敏感性[J]. 现代应用物理, 2025, 16: 020605Fu Yanjun, Wei Yuan, Zuo Yinghong, et al. Timing sensitivity of the transient dose rate radiation effect on typical correlation double sampling circuit[J]. Modern Applied Physics, 2025, 16: 020605 [18] Oldham T R, McLean F B. Total ionizing dose effects in MOS oxides and devices[J]. IEEE Transactions on Nuclear Science, 2003, 50(3): 483-499. doi: 10.1109/TNS.2003.812927 [19] Li Dongmei, Wang Zhihua, Huangfu Liying, et al. Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology[J]. Chinese Physics, 2007, 16(12): 3760-3765. doi: 10.1088/1009-1963/16/12/034 [20] Prinzie J, Christiansen J, Moreira P, et al. Comparison of a 65 nm CMOS ring- and LC-oscillator based PLL in terms of TID and SEU sensitivity[J]. IEEE Transactions on Nuclear Science, 2017, 64(1): 245-252. doi: 10.1109/TNS.2016.2616919 [21] Chen Zhuojun, Ding Ding, Dong Yemin, et al. Study of total-ionizing-dose effects on a single-event-hardened phase-locked loop[J]. IEEE Transactions on Nuclear Science, 2018, 65(4): 997-1004. doi: 10.1109/TNS.2018.2812806 [22] 李铁虎. 深亚微米和纳米级集成电路的辐照效应及抗辐照加固技术[D]. 西安: 西安电子科技大学, 2018Li Tiehu. Radiation effects and hardening techniques of deep submicron and nano-scale integrated circuits[D]. Xi’an: Xidian University, 2018 [23] 吕荫学, 刘梦新, 罗家俊, 等. 辐照加固的500MHz锁相环设计[J]. 半导体技术, 2011, 36(1): 49-54Lü Yinxue, Liu Mengxin, Luo Jiajun, et al. Design of radiaiton hardened 500MHz phase-locked loop[J]. Semiconductor Technology, 2011, 36(1): 49-54 [24] 叶蓉. 可编程抗辐射锁相环设计[D]. 哈尔滨: 哈尔滨工业大学, 2015Ye Rong. Design of programmable radiation-hardend phase-locked-loop[D]. Harbin: Harbin Institute of Technology, 2015 [25] 答元. MOS器件电离损伤的蒙特卡罗模拟研究[D]. 西安: 西安工业大学, 2011Da Yuan. Study of Monte Carlo simulation of the ionization damage of MOS device[D]. Xi'an: Xi'an Technological University, 2011 [26] 王敬敬. CMOS低相噪锁相环电路的设计与研究[D]. 北京: 北京交通大学, 2024Wang Jingjing. Design and research of CMOS low phase noise phase-locked loop circuit[D]. Beijing: Beijing Jiaotong University, 2024 [27] Kumar P G, Bhatt D. Design and analysis of high speed phase frequency detector with zero dead zone in PLL[J]. IETE Journal of Research, 2025, 71(4): 1190-1198. doi: 10.1080/03772063.2025.2450038 [28] 李金凤, 郭瑞华, 凌辛旺, 等. 基于55 nm CMOS工艺的小数分频电荷泵锁相环设计[J]. 电子设计工程, 2024, 32(12): 71-75Li Jinfeng, Guo Ruihua, Ling Xinwang, et al. Design of fractional frequency division charge pump PLL based on 55 nm CMOS process[J]. Electronic Design Engineering, 2024, 32(12): 71-75 [29] Li Tongde, Zhao Yuanfu, Wang Liang, et al. Investigation on transient ionizing radiation effects in a 4-Mb SRAM with dual supply voltages[J]. IEEE Transactions on Nuclear Science, 2022, 69(3): 340-348. doi: 10.1109/TNS.2022.3148441 [30] Kumar M, Ubhi J S, Basra S, et al. Total ionizing dose hardness analysis of transistors in commercial 180 nm CMOS technology[J]. Microelectronics Journal, 2021, 115: 105182. doi: 10.1016/j.mejo.2021.105182 [31] 伏琰军, 韦源, 左应红, 等. 典型CMOS图像传感器读出电路总剂量辐射效应仿真模拟研究[J]. 现代应用物理, 2025, 16: 030604 doi: 10.12061/j.issn.2095-6223.202409003Fu Yanjun, Wei Yuan, Zuo Yinghong, et al. Simulation study of total dose radiation effect on readout circuit of typical CMOS image sensor[J]. Modern Applied Physics, 2025, 16: 030604 doi: 10.12061/j.issn.2095-6223.202409003 [32] 李海松, 王斌, 杨博, 等. 14 nm体硅FinFET工艺标准单元的总剂量效应[J]. 半导体技术, 2025, 50(6): 619-624,647Li Haisong, Wang Bin, Yang Bo, et al. Total ionizing dose effect of standard cells for 14 nm bulk silicon FinFET processor[J]. Semiconductor Technology, 2025, 50(6): 619-624,647 [33] Haran B S, Kumar A, Adam L, et al. 22 nm technology compatible fully functional 0.1 μm2 6T-SRAM cell[C]//2008 IEEE International Electron Devices Meeting. 2008: 1-4. [34] Raine M, Gaillardin M, Paillet P, et al. Dispersion of heavy ion deposited energy in nanometric electronic devices: experimental measurements and simulation possibilities[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365: 636-640. doi: 10.1016/j.nimb.2015.09.087 [35] Junior Rossetto A C, Wirth G I, Dallasen R V. Performance analysis of a clock generator PLL under TID effects[C]//2014 15th Latin American Test Workshop. 2014: 1-5. -
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