Test methods of radiation damage effects on semiconductor laser devices
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摘要: 半导体激光器（LD）作为光源器件被广泛应用于光通信、测量、成像、显示、照明、工业加工、医疗诊断等领域，随着LD在空间光通信、大型强子对撞机、核工业等辐射环境中的大量应用，工作在空间辐射或核辐射环境中的LD会受到辐射损伤的问题日益突出，以LD为核心器件的光通信系统在辐射环境中的可靠性问题备受关注。鉴于国内外关于LD辐照损伤效应试验方法相关的研究报道较少，主要针对LD在辐射环境中应用时遭受的辐照损伤效应，参考与电子元器件辐射效应相关的国内外标准、规范、指南，结合LD辐照损伤效应试验、辐射粒子输运模拟计算、辐照效应仿真模拟、辐照损伤机理分析，从辐照试验源选取、试验流程、辐照偏置条件等方面开展LD辐照损伤效应试验方法研究，分别建立LD位移效应、电离总剂量效应、瞬时剂量率效应辐照试验流程，从而形成辐照损伤效应试验方法，为开展LD辐照损伤评估和抗辐射加固性能考核提供试验技术支撑。Abstract:
Background Semiconductor laser devices (LDs) are a kind of laser with semiconductor material as its working material. LDs are the general name of optical oscillator and optical amplifier produced by photon excited emission caused by electron-optical transition in semiconductor material. LDs have the advantages of small volume, light weight, low power consumption, long life, simple structure, direct modulation and fast response. Thus, LDs are widely used as light source devices in the fields of optics communication, measurement, imaging, display, illumination, industrial processing, medical diagnosis, and so on.Purpose With the application of LD in space optics communication, large hadron collider, nuclear industry, and other radiation environments, LDs operated in space radiation or nuclear radiation environment will suffer radiation damage. The reliability of LD-based optics communication system in radiation environment has attracted much attention. In view of the few reports on LD irradiation damage test methods at home and abroad, this paper mainly focuses on the radiation damage effects on the LDs used in radiation environment.Methods Referring to domestic and foreign standards, specifications and guidelines related to the radiation effects on the electronic components, combining LD irradiation damage test, radiation particle transport simulation and radiation effect simulation, and radiation damage mechanism analysis, the test methods of LD irradiation damage effect are studied from the aspects of irradiation source selection, test flow, irradiation bias conditions, etc.Result The radiation test procedures for the LD displacement effect, ionization total dose effect, and transient dose rate effect are established respectively to form the test method of radiation damage effects on LDs.Conclusions The research provides the experimental technical supports for the evaluation of LD radiation damage and the test of LD radiation hardening. -
图 1 LD的P-I特性曲线随反应堆中子辐照增大的变化关系曲线
Figure 1. P-I curves versus the reactor neutron fluence
图 3 不同偏置下辐照后的LD阈值电流与辐照前阈值电流之比随中子辐照注量的变化曲线
Figure 3. Ratio of the threshold current after radiation of LD to threshold current before radiation versus the reactor neutron fluence with different bias conditions
图 4 在能量为5 MeV，注量为3×1013 p/cm2质子的条件下，LD处于不同偏置状态下辐照后的P-I特性比较
Figure 4. Comparison of LD P-I curves at the 5 MeV proton fluence of 3×1013 p/cm2 with different bias conditions
图 5 半导体激光器电离辐射总剂量效应辐照试验流程
Figure 5. Test procedure of total ionizing dose radiation effects on LD
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