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高动态磁场环境下陶瓷真空盒耦合阻抗的数值模拟

黄良生 吴彬 黄明阳 刘仁洪 谭彪 王鹏程 李晓

黄良生, 吴彬, 黄明阳, 等. 高动态磁场环境下陶瓷真空盒耦合阻抗的数值模拟[J]. 强激光与粒子束. doi: 10.11884/HPLPB202638.250137
引用本文: 黄良生, 吴彬, 黄明阳, 等. 高动态磁场环境下陶瓷真空盒耦合阻抗的数值模拟[J]. 强激光与粒子束. doi: 10.11884/HPLPB202638.250137
Huang Liangsheng, Wu Bin, Huang Mingyang, et al. Numerical simulation of beam coupling impedance of ceramic chamber in dynamic magnetic field[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250137
Citation: Huang Liangsheng, Wu Bin, Huang Mingyang, et al. Numerical simulation of beam coupling impedance of ceramic chamber in dynamic magnetic field[J]. High Power Laser and Particle Beams. doi: 10.11884/HPLPB202638.250137

高动态磁场环境下陶瓷真空盒耦合阻抗的数值模拟

doi: 10.11884/HPLPB202638.250137
基金项目: 广东省自然科学基金项目(2021B1515140007)
详细信息
    作者简介:

    黄良生,huangls@ihep.ac.cn

  • 中图分类号: O44,O57

Numerical simulation of beam coupling impedance of ceramic chamber in dynamic magnetic field

  • 摘要: 在快循环同步加速器(RCS)中,磁场与束流能量保持同步,形成高动态的磁场环境。为完全避免涡流效应并降低阻抗,RCS通常使用陶瓷真空盒,并覆盖复杂的屏蔽层结构。虽然传统理论认为此类结构的实部阻抗对束流动力学的影响可以忽略,但中国散裂中子源(CSNS)的阻抗测量却揭示了陶瓷真空盒中存在低频谐振阻抗。理论溯源表明,这一阻抗正是导致CSNS/RCS束流不稳定性的关键机制。由于该谐振阻抗的物理机制复杂,尚无独立方法验证测量阻抗。为此,本研究首次采用数值模拟方法证实了谐振阻抗的客观存在,并通过系统模拟涵盖了RCS各类陶瓷真空盒的构型,成功构建了高精度阻抗模型,为强流加速器中的束流不稳定性研究提供了重要的理论支持。
  • 图  1  陶瓷真空盒结构示意图

    Figure  1.  Illustration of the ceramic chamber

    图  2  环路法阻抗测量原理图

    Figure  2.  Schematic setup of the transverse impedance measurement with one loop method

    图  3  陶瓷真空盒实验室阻抗测量布局图

    Figure  3.  Layout diagram on the bench

    图  4  INB1陶瓷真空盒横向阻抗测量结果

    Figure  4.  Measured transverse impedance of INB1

    图  5  INB1陶瓷真空盒CST模拟模型

    Figure  5.  CST simulated model of the ceramic chamber

    图  6  RCS陶瓷真空盒阻抗

    Figure  6.  Impedance of ceramic chambers within the RCS

    表  1  RCS陶瓷真空盒参数表

    Table  1.   Parameters of the RCS Ceramic Chamber

    name shape length/m radiusa/mm thicknessb/mm number
    MB elliptic 66.6 218×135 15×8.5 24
    QA circular 12.4 91.5 7.5 16
    QB circular 24.6 124.5 7.5 16
    QC circular 12.3 99.5 7.5 8
    QD circular 9.2 115 7.5 8
    INBc circular 4.4 80 7.5 4
    Note:a It means horizontal × vertical size for MB with an elliptic cross-section;
    b It means horizontal × vertical thickness for MB with an elliptic cross-section;
    b There are two similar types of injection chambers, and simplifies as one here.
    下载: 导出CSV

    表  2  INB1陶瓷真空盒谐振阻抗模拟和测量阻抗比较

    Table  2.   Simulated and measured resonant impedance of the INB1

    resontant freq/MHz Rs/(kΩ/m) Q
    Simulation 0.123 450 150
    Measurement 0.123 290 40
    下载: 导出CSV
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出版历程
  • 收稿日期:  2025-05-16
  • 修回日期:  2025-12-12
  • 录用日期:  2025-12-08
  • 网络出版日期:  2025-12-15

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