可关断SiC基光触发多门极半导体开关仿真研究

蔡平; 毛江凌; 刘文凤; 栾崇彪; 傅翔; 袁建强

doi:10.11884/HPLPB202638.250398

可关断SiC基光触发多门极半导体开关仿真研究

doi: 10.11884/HPLPB202638.250398

蔡平^{1, 2,},
毛江凌^{1, 2},
刘文凤^{1, 2},
栾崇彪^1, ,,
傅翔¹,
袁建强^{1, 2, ,}

1.
中国工程物理研究院流体物理研究所，四川绵阳 621900
2.
中国工程物理研究院研究生院，四川绵阳 621900

基金项目: 北京市自然科学基金项目(L245011)

详细信息

作者简介:
蔡　平，caiping24@gscaep.ac.cn

通讯作者:
栾崇彪，luanchongbiao@163.com。

袁建强，j.q.yuan@163.com。

中图分类号: TN335
计量
- 文章访问数: 24
- HTML全文浏览量: 8
- PDF下载量: 3
- 被引次数: 0
出版历程
- 收稿日期: 2025-11-05
- 修回日期: 2026-02-09
- 录用日期: 2026-02-04
- 网络出版日期: 2026-03-06

Simulation of SiC based turn-off light initiated multi gate semiconductor switches

Cai Ping^{1, 2
,},
Mao Jiangling^{1, 2},
Liu Wenfeng^{1, 2},
Luan Chongbiao^{1
, ,},
Fu Xiang¹,
Yuan Jianqiang^{1, 2
, ,}

1.
Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900, China
2.
Graduate School of China Academy of Engineering Physics, Mianyang 621900, China

摘要

摘要: 碳化硅（SiC）基光触发多门极半导体开关（LIMS）具有功率容量高，导通速度快的显著优势，在雷达、加速器以及脉冲源等方面广泛应用。针对LIMS存在的下降沿长，关断速度慢等问题，提出了一种具有关断作用的LIMS阳极结构设计。通过实验数据对仿真模型进行校准，并结合仿真对具有关断阳极结构器件的导通特性进行研究。仿真结果表明，具有关断阳极结构的器件，能在激光触发后形成pnpn结构的正反馈效应，增加导通电流。在激光结束后，随着光生载流子的复合，以及关断阳极结构对基区载流子的抽取作用，显著地提高器件的关断速度。当输入电压为4 kV时，在数百A脉冲电流放电条件下，电流脉冲宽度从0.79 μs减小到百ns以下，器件的关断时间降低至0.6 μs，可以在kHz及以上的重复频率场景中应用。
- 碳化硅 /
- 光触发多门极半导体开关 /
- 阳极结构 /
- 关断速度
Abstract: Background
SiC-based light-initiated multi-gate semiconductor switches (LIMS) deliver superior response speeds due to the faster injection of photo-generated carriers compared to conventional electrically injected carriers. They can be used in a variety of applications, including radars, accelerators, and pulse sources.
Purpose
Regarding the problems such as the long falling edge and slow turn-off speed of LIMS, an anode structure design with turn-off capability is proposed.
Methods
The model and its parameters are calibrated based on experimental data, and the simulation is used to study the conduction characteristics of devices with a turn-off anode structure.
Results
The simulation results show that devices with a turn-off anode structure can achieve positive feedback in the pnpn configuration following laser activation, thereby increasing the conduction current. When the laser pulse ends, the recombination of photo-generated carriers and the extraction of carriers from the base region by the turn-off anode structure significantly enhance the turn-off speed of the device.
Conclusions
With a 4 kV anode bias and a peak current of several hundred amperes, the modified LIMS reduces the full-width-at-half-maximum of the current pulse from 0.79 µs to <100 ns and shortens the turn-off time to 0.6 µs. These results indicate suitability for repetitive operation at kilohertz frequencies and above.
- silicon carbide /
- light-initiated multi-gate semiconductor switches /
- anode structure /
- turn-off speed

HTML全文

图 1 器件结构示意图与PNPN耦合模型

Figure 1. Diagram of device structure and coupling model

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图 2 LIMS导通性能电路以及激光波形示意图

Figure 2. The circuits and laser waveform for the on-state of the LIMS

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图 3 器件导通瞬态曲线实验结果与仿真结果对比

Figure 3. Transient response of test and simulation

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图 4 不同器件的仿真建模

Figure 4. Simulation model of different devices

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图 5 不同结构器件的瞬态响应

Figure 5. Transient responses of devices with different structures

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图 6 不同电压下可关断LIMS器件的瞬态响应曲线

Figure 6. Transient responses of turn-off LIMS under different voltages

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图 7 输入电压为4 kV时，LIMS和可关断LIMS器件的瞬态响应曲线

Figure 7. The transient responses of LIMS and turn-off LIMS at input voltage of 4 kV

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图 8 可关断LIMS器件导通时的电流密度分布

Figure 8. Current density distribution at on-state of turn-off LIMS

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图 9 可关断LIMS器件开启和关断阶段电流密度分布

Figure 9. Current density distribution during the turn-on and turn-off stages of the device

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表 1 碳化硅LIMS仿真参数

Table 1. Parameters for simulation of SiC LIMS

semiconductor band gap/eV	dielectric constant	μ_n/(cm²·V⁻¹·s⁻¹)	μ_p/(cm²·V⁻¹·s⁻¹)	absorption coefficient/cm⁻¹	τ_n/μs	τ_p/μs	saturation drift velocity/(cm·s⁻¹)
3.4	9.76	950	125	200	1	0.2	2×10

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表 2 碳化硅掺杂浓度和厚度

Table 2. Doping and thickness of SiC

layer	doping concentration/cm⁻³	thickness/μm
p+ emitter	1.5×10¹⁹	3
n base	3.0×10¹⁷	2.5
p- base	4.0×10¹⁴	60
p insert	5.0×10¹⁶	2
n insert	3.0×10¹⁸	1
n+ substrate	5.0×10¹⁹	350

下载: 导出CSV

参考文献(24)

[1]	梁琳, 颜小雪, 黄鑫远, 等. 半导体脉冲功率开关器件综述[J]. 中国电机工程学报, 2022, 42(23): 8631-8651 Liang Lin, Yan Xiaoxue, Huang Xinyuan, et al. Review on semiconductor pulsed power switching devices[J]. Proceedings of the CSEE, 2022, 42(23): 8631-8651
[2]	邵方格. SiC GTO器件的驱动设计与优化[D]. 杭州: 浙江大学, 2023: 6-9 Shao Fangge. Driver design and optimization of SiC GTO devices[D]. Hangzhou: Zhejiang University, 2023: 6-9
[3]	孙瑞泽, 陈万军, 刘超, 等. 压控型脉冲功率半导体器件技术及应用[J]. 强激光与粒子束, 2024, 36: 095001 doi: 10.11884/HPLPB202436.240120 Sun Ruize, Chen Wanjun, Liu Chao, et al. Technology and application of the voltage-controlled pulse power semiconductor devices[J]. High Power Laser and Particle Beams, 2024, 36: 095001 doi: 10.11884/HPLPB202436.240120
[4]	Kimoto T, Cooper J A. Fundamentals of silicon carbide technology: growth, characterization, devices, and applications[M]. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2014.
[5]	Rafin S M S H, Ahmed R, Haque M A, et al. Power electronics revolutionized: a comprehensive analysis of emerging wide and ultrawide bandgap devices[J]. Micromachines, 2023, 14: 2045. doi: 10.3390/mi14112045
[6]	龙虎. 10kV碳化硅二极管与晶闸管的终端技术研究[D]. 杭州: 浙江大学, 2023: 10-31 Long Hu. Study on termination technologies of 10-kV silicon carbide diodes and thyristors[D]. Hangzhou: Zhejiang University, 2023: 10-31
[7]	周才能, 岳瑞峰, 王燕. 碳化硅门极可关断晶闸管的研究进展[J]. 半导体技术, 2016, 41(2): 89-95 Zhou Caineng, Yue Ruifeng, Wang Yan. Research Developments in silicon carbide gate turn-off thyristors[J]. Semiconductor Technology, 2016, 41(2): 89-95
[8]	张渊. 6500V碳化硅发射极关断晶闸管仿真和特性的研究[D]. 长沙: 湖南大学, 2017: 10-12 Zhang Yuan. Research on 6500V SiC ETO simulation and characteristics[D]. Changsha: Hunan University, 2017: 10-12
[9]	陈楠. 3300V MOS控制晶闸管设计与实现[D]. 成都: 电子科技大学, 2021: 15-22 Chen Nan. Design and realization of a 3300V MOS controlled thyristor[D]. Chengdu: University of Electronic Science and Technology of China, 2021: 15-22
[10]	钟艺文. SiC MOS控制晶闸管的机理研究与特性分析[D]. 西安: 西安理工大学, 2022: 9-12 Zhong Yiwen. Mechanism research and characteristic analysis of SiC MOS controlled thyristor[D]. Xi’an: Xi’an University of Technology, 2022: 9-12
[11]	刘中梦雪, 黄伟, 刘垚, 等. 低导通压降MOS控制晶闸管的研制[J]. 半导体技术, 2023, 48(6): 476-481,487 doi: 10.13290/j.cnki.bdtjs.2023.06.004 Liu Zhongmengxue, Huang Wei, Liu Yao, et al. Development of the MOS controlled thyristor with low on-state voltage drop[J]. Semiconductor Technology, 2023, 48(6): 476-481,487 doi: 10.13290/j.cnki.bdtjs.2023.06.004
[12]	张荣. 静电感应晶闸管的研制[D]. 兰州: 兰州大学, 2009: 4-10 Zhang Rong. The research and manufacture of static induction thyristor[D]. Lanzhou: Lanzhou University, 2009: 4-10
[13]	王曦. 4H-SiC光触发晶闸管新结构研究[D]. 西安: 西安理工大学, 2019: 11-13 Wang Xi. Study on novel structure of 4H-SiC light triggered thyristor[D]. Xi’an: Xi’an University of Technology, 2019: 11-13
[14]	Luan Chongbiao, Yuan Jianqiang, Liu Hongwei, et al. Study of a novel SiC-based light initiated multi-gate semiconductor switch[J]. Journal of Semiconductors, 2025, 46: 112402. doi: 10.1088/1674-4926/25020033
[15]	安丽琪. SiC光触发晶闸管放大门极结构的设计与研究[D]. 西安: 西安理工大学, 2020: 7-11 An Liqi. Design and study of SiC light triggered thyristor amplified gate structure[D]. Xi’an: Xi’an University of Technology, 2020: 7-11
[16]	刘宏伟, 王凌云, 栾崇彪, 等. 激光触发多门极半导体开关初步研究[J]. 强激光与粒子束, 2024, 36: 115004 doi: 10.11884/HPLPB202436.240331 Liu Hongwei, Wang Lingyun, Luan Chongbiao, et al. Preliminary study on laser initiated multi-gate semiconductor switch[J]. High Power Laser and Particle Beams, 2024, 36: 115004 doi: 10.11884/HPLPB202436.240331
[17]	王凌云, 刘宏伟, 袁建强, 等. 光控多门极晶闸管的多种工作模式[J]. 物理学报, 2025, 74: 058401 doi: 10.7498/aps.74.20241608 Wang Lingyun, Liu Hongwei, Yuan Jianqiang, et al. Various operating modes of optically controlled multi-gate thyristors[J]. Acta Physica Sinica, 2025, 74: 058401 doi: 10.7498/aps.74.20241608
[18]	李昊. 4H-SiC JBS与GTO中子辐照损伤及其退化机理研究[D]. 兰州: 兰州大学, 2024: 20-21 Li Hao. Research on neutron irradiation damage and degradation mechanism of 4H-SiC JBS and GTO[D]. Lanzhou: Lanzhou University, 2024: 20-21
[19]	Ruff M, Mitlehner H, Helbig R. SiC devices: physics and numerical simulation[J]. IEEE Transactions on Electron Devices, 1994, 41(6): 1040-1054. doi: 10.1109/16.293319
[20]	Hillkirk L M, Hefner A R, Dutton R W. Physics-based numerical simulation for design of high-voltage, extremely-high current density SiC power devices[C]//Proceedings of the International Semiconductor Device Research Symposium. 2007: 1-2.
[21]	Galeckas A, Linnros J, Grivickas V, et al. Auger recombination in 4H-SiC: Unusual temperature behavior[J]. Applied Physics Letters, 1997, 71(22): 3269-3271. doi: 10.1063/1.120309
[22]	Kimoto T, Niwa H, Okuda T, et al. Carrier lifetime and breakdown phenomena in SiC power device material[J]. Journal of Physics D: Applied Physics, 2018, 51: 363001. doi: 10.1088/1361-6463/aad26a
[23]	Chen Shengtao, Xu Ming, Lv Ruidong, et al. Photon absorption effects on the transient carrier dynamics in high-purity 4H-SiC PCSS[J]. IEEE Electron Device Letters, 2025, 46(2): 278-281. doi: 10.1109/LED.2024.3506561
[24]	Khan I A, Cooper J A. Measurement of high-field electron transport in silicon carbide[J]. IEEE Transactions on Electron Devices, 2000, 47(2): 269-273. doi: 10.1109/16.822266